2012 IEEE International Interconnect Technology Conference最新文献_第6页

Effects of CVD-W process on electrical properties in sub 2× nm flash devices CVD-W工艺对亚2xnm闪存器件电性能的影响

2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251577

Hauk Han, Chan-Ho Lee, Hyunseok Lim, M. Lee

引用次数: 0

Electrical and structural characterization of 150 nm CNT contacts with Cu damascene top metallization 150纳米碳纳米管接触铜damascene顶部金属化的电学和结构表征

2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251670

M. V. Veen, Bart Vereecke, Masahito Sugiura, Y. Kashiwagi, X. Ke, D. Cott, J. Vanpaemel, P. Vereecken, S. Gendt, C. Huyghebaert, Zsolt Tokei

引用次数: 7

56nm-pitch low-k/Cu dual-damascene interconnects integration with sidewall image transfer (SIT) patterning scheme 56nm节距低k/Cu双砷互连集成与侧壁图像传输(SIT)模式方案

2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251664

M. Tagami, K. Shimada, Y. Yin, M. Ishikawa, C. Waskiewicz, S.T. Chen, H. Shobha, E. Soda, N. Saulnier, J. Arnold, M. Colburn, T. Usui, T. Spooner

引用次数: 3

Growth characteristics of Mn silicate barrier layers on SiO2 二氧化硅上锰硅酸盐阻挡层的生长特性

2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251652

P. Casey, J. Bogan, A. McCoy, J. Lozano, P. Nellist, G. Hughes

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引用次数: 2

Effect of W doping on bipolar resistive switching behavior of TiN/W:NbOx/Pt device W掺杂对TiN/W:NbOx/Pt器件双极电阻开关行为的影响

2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251647

Kyumin Lee, Jonggi Kim, Sunghoon Lee, Sunghoon Park, H. Sohn

引用次数: 0

Electrical characterization of carbon nanotube vertical interconnects with different lengths and widths 不同长度和宽度的碳纳米管垂直互连的电学特性

2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251578

S. Vollebregt, R. Ishihara, F. Tichelaar, J. van der Cingel, K. Beenakker

引用次数: 10

How to address metallization and reliability challenges in today and tomorrows technology nodes? 如何应对当今和未来技术节点的金属化和可靠性挑战?

2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251655

A. Preusse, J. Hahn, T. Chowdhury, B. Hintze, R. Liske, M. Nopper, U. Stoeckgen

引用次数: 0

Fine pitch TSV integration in silicon micropin-fin heat sinks for 3D ICs 用于3D集成电路的硅微针翅片散热器中的细间距TSV集成

2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251587

A. Dembla, Yue Zhang, Muhannad S. Bakir

引用次数: 14

Optical interconnect technology for 3D LSI and neural engineering applications 用于三维大规模集成电路和神经工程应用的光互连技术

2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251672

T. Tanaka, A. Noriki, T. Fukushima, K. Lee, M. Koyanagi

引用次数: 0

Direct copper electrodeposition on a chemical vapor-deposited ruthenium seed layer for through-silicon vias 在化学气相沉积钌种子层上直接电沉积铜，用于硅通孔

2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI: 10.1109/IITC.2012.6251644

P. Shi, J. Enloe, R. Van Den Boom, B. Sapp

引用次数: 6