{"title":"Effects of CVD-W process on electrical properties in sub 2× nm flash devices","authors":"Hauk Han, Chan-Ho Lee, Hyunseok Lim, M. Lee","doi":"10.1109/IITC.2012.6251577","DOIUrl":null,"url":null,"abstract":"The physical and electrical properties of chemical vapor deposition (CVD) tungsten (W) are evaluated in terms of W nucleation layer (SiH<sub>4</sub> and B<sub>2</sub>H<sub>6</sub> reduction). Moreover effects of W nucleation layer on contact resistance (Rc) for sub 2× nm device are also studied. The results show that electrical properties of W thin films are varied with nucleation layers. Our results reveal that W reductions gases determine the grain sizes of W films which influence both electrical and surface properties of W films. It also has been investigated that effect of boron (B) atoms in B<sub>2</sub>H<sub>6</sub> reduction W layer on P<sup>+</sup> Rc. Out-diffused B atoms from P<sup>+</sup> junction into silicide layer during post thermal process are compensated by B of B<sub>2</sub>H<sub>6</sub> reduction W layer, which result in no degradation of P<sup>+</sup> Rc despite of dopants loss at the contact interfaces. We reveal that tungsten nucleation layers are correlated with physical and electrical properties of W films and device performance.","PeriodicalId":165741,"journal":{"name":"2012 IEEE International Interconnect Technology Conference","volume":"129 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2012.6251577","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The physical and electrical properties of chemical vapor deposition (CVD) tungsten (W) are evaluated in terms of W nucleation layer (SiH4 and B2H6 reduction). Moreover effects of W nucleation layer on contact resistance (Rc) for sub 2× nm device are also studied. The results show that electrical properties of W thin films are varied with nucleation layers. Our results reveal that W reductions gases determine the grain sizes of W films which influence both electrical and surface properties of W films. It also has been investigated that effect of boron (B) atoms in B2H6 reduction W layer on P+ Rc. Out-diffused B atoms from P+ junction into silicide layer during post thermal process are compensated by B of B2H6 reduction W layer, which result in no degradation of P+ Rc despite of dopants loss at the contact interfaces. We reveal that tungsten nucleation layers are correlated with physical and electrical properties of W films and device performance.