{"title":"用于3D集成电路的硅微针翅片散热器中的细间距TSV集成","authors":"A. Dembla, Yue Zhang, Muhannad S. Bakir","doi":"10.1109/IITC.2012.6251587","DOIUrl":null,"url":null,"abstract":"Future high performance 3D systems require a systematic co-design of their electrical interconnect network and their heat removal mechanism. This paper presents fine pitch (20μm) and high aspect ratio (18:1) TSVs integrated in a micropin-fin heat sink capable of removing power density of 100W/cm2 and resulting in junction temperatures below 50°C.","PeriodicalId":165741,"journal":{"name":"2012 IEEE International Interconnect Technology Conference","volume":"123 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Fine pitch TSV integration in silicon micropin-fin heat sinks for 3D ICs\",\"authors\":\"A. Dembla, Yue Zhang, Muhannad S. Bakir\",\"doi\":\"10.1109/IITC.2012.6251587\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Future high performance 3D systems require a systematic co-design of their electrical interconnect network and their heat removal mechanism. This paper presents fine pitch (20μm) and high aspect ratio (18:1) TSVs integrated in a micropin-fin heat sink capable of removing power density of 100W/cm2 and resulting in junction temperatures below 50°C.\",\"PeriodicalId\":165741,\"journal\":{\"name\":\"2012 IEEE International Interconnect Technology Conference\",\"volume\":\"123 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Interconnect Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2012.6251587\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2012.6251587","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fine pitch TSV integration in silicon micropin-fin heat sinks for 3D ICs
Future high performance 3D systems require a systematic co-design of their electrical interconnect network and their heat removal mechanism. This paper presents fine pitch (20μm) and high aspect ratio (18:1) TSVs integrated in a micropin-fin heat sink capable of removing power density of 100W/cm2 and resulting in junction temperatures below 50°C.
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