Kyumin Lee, Jonggi Kim, Sunghoon Lee, Sunghoon Park, H. Sohn
{"title":"W掺杂对TiN/W:NbOx/Pt器件双极电阻开关行为的影响","authors":"Kyumin Lee, Jonggi Kim, Sunghoon Lee, Sunghoon Park, H. Sohn","doi":"10.1109/IITC.2012.6251647","DOIUrl":null,"url":null,"abstract":"In our study, resistive switching characteristics of TiN/ W:NbOx/Pt with tungsten doping concentration are investigated. We demonstrated that an increase of oxygen vacancies with increasing the concentration of W doping in W:NbOx films. The W:NbOx specimens show bipolar resistive switching and switching current could be controlled by tungsten doping concentration in NbOx. It is concluded that oxygen vacancies concentration plays an important role in bipolar resistive switching characteristic of W:NbOx.","PeriodicalId":165741,"journal":{"name":"2012 IEEE International Interconnect Technology Conference","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of W doping on bipolar resistive switching behavior of TiN/W:NbOx/Pt device\",\"authors\":\"Kyumin Lee, Jonggi Kim, Sunghoon Lee, Sunghoon Park, H. Sohn\",\"doi\":\"10.1109/IITC.2012.6251647\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In our study, resistive switching characteristics of TiN/ W:NbOx/Pt with tungsten doping concentration are investigated. We demonstrated that an increase of oxygen vacancies with increasing the concentration of W doping in W:NbOx films. The W:NbOx specimens show bipolar resistive switching and switching current could be controlled by tungsten doping concentration in NbOx. It is concluded that oxygen vacancies concentration plays an important role in bipolar resistive switching characteristic of W:NbOx.\",\"PeriodicalId\":165741,\"journal\":{\"name\":\"2012 IEEE International Interconnect Technology Conference\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Interconnect Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2012.6251647\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2012.6251647","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of W doping on bipolar resistive switching behavior of TiN/W:NbOx/Pt device
In our study, resistive switching characteristics of TiN/ W:NbOx/Pt with tungsten doping concentration are investigated. We demonstrated that an increase of oxygen vacancies with increasing the concentration of W doping in W:NbOx films. The W:NbOx specimens show bipolar resistive switching and switching current could be controlled by tungsten doping concentration in NbOx. It is concluded that oxygen vacancies concentration plays an important role in bipolar resistive switching characteristic of W:NbOx.
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