Electrical and structural characterization of 150 nm CNT contacts with Cu damascene top metallization

2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI:10.1109/IITC.2012.6251670

M. V. Veen, Bart Vereecke, Masahito Sugiura, Y. Kashiwagi, X. Ke, D. Cott, J. Vanpaemel, P. Vereecken, S. Gendt, C. Huyghebaert, Zsolt Tokei

引用次数: 7

Abstract

This paper discusses the electrical and structural characterization of 150 nm diameter contacts filled with carbon nanotubes (CNTs) and a Cu damascene top metal. We present the first images of CNTs in direct contact with the top metal. A CNT tip clean before metallization reduced the single CNT contact hole resistance from 4.8 kΩ down to 2.8 kΩ (aspect ratio 2.4). The first basic electrical breakdown experiments with Kelvins resulted in high breakdown currents of 5-13 MA/cm2.

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150纳米碳纳米管接触铜damascene顶部金属化的电学和结构表征

本文讨论了以碳纳米管(cnt)和Cu damascene金属填充的直径为150 nm触点的电学和结构表征。我们展示了碳纳米管与顶部金属直接接触的第一张图像。金属化前的碳纳米管尖端清洁将单个碳纳米管接触孔电阻从4.8 kΩ降至2.8 kΩ(纵横比2.4)。开尔文的第一个基本电击穿实验产生了5-13 MA/cm2的高击穿电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2012 IEEE International Interconnect Technology Conference

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