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17th International Reliability Physics Symposium最新文献

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Applications of X-Ray Energy Dispersive Analysis to Semiconductor Plastic Packages x射线能量色散分析在半导体塑料封装中的应用
17th International Reliability Physics Symposium Pub Date : 1979-04-01 DOI: 10.1109/IRPS.1979.362895
G. Riga, P. Tang
{"title":"Applications of X-Ray Energy Dispersive Analysis to Semiconductor Plastic Packages","authors":"G. Riga, P. Tang","doi":"10.1109/IRPS.1979.362895","DOIUrl":"https://doi.org/10.1109/IRPS.1979.362895","url":null,"abstract":"The plastic used in semiconductor packages can be readily characterized for filler and fire retardant content by X-ray-ED analysis. The technique can be used to monitor lot to lot process variations as well as uniformity of molded parts. It can be applied in incoming quality control as a quality indicator of the non polymerized plastic or the finished product. Reliability test failures can be analyzed to insure their identification, to measure the degree of surface contamination, or to perform correlation studies.","PeriodicalId":161068,"journal":{"name":"17th International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116609676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Effect of Hydrogen on the Rate of Formation of Intermetallics in the Cu-Sn, Ag-Sn and Ni-Sn Systems 氢对Cu-Sn、Ag-Sn和Ni-Sn体系中金属间化合物形成速率的影响
17th International Reliability Physics Symposium Pub Date : 1979-04-01 DOI: 10.1109/IRPS.1979.362875
D. Shih, P. Ficalora
{"title":"The Effect of Hydrogen on the Rate of Formation of Intermetallics in the Cu-Sn, Ag-Sn and Ni-Sn Systems","authors":"D. Shih, P. Ficalora","doi":"10.1109/IRPS.1979.362875","DOIUrl":"https://doi.org/10.1109/IRPS.1979.362875","url":null,"abstract":"The purpose of this work was to determine if changes in surface free energy via adsorption of hydrogen will alter the rate of formation in the Cu-Sn, Ag-Sn and Ni-Sn systems. Metallic couples, prepared by depositing molten tin on Cu, Ag or Ni, were subjected to temperatures slightly below the eutectic temperatures for time periods up to 40 hours in hydrogen or air. After this treatment the couples were cross sectioned and polished so that the interface could be examined. The rates of compound formation in those couples subjected to hydrogen were found to be drastically reduced. An analysis based on diffusion and surface free energy changes was made to explain these observations. This analysis can be applied where the driving force for diffusion is approximately equal to the decrease in surface free energy caused by hydrogen adsorption.","PeriodicalId":161068,"journal":{"name":"17th International Reliability Physics Symposium","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125248675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A New Screening Method for Optocouplers and LEDS 一种新的光耦合器和led筛选方法
17th International Reliability Physics Symposium Pub Date : 1979-04-01 DOI: 10.1109/IRPS.1979.362888
T. Takahashi, S. Todoroki, S. Mitani
{"title":"A New Screening Method for Optocouplers and LEDS","authors":"T. Takahashi, S. Todoroki, S. Mitani","doi":"10.1109/IRPS.1979.362888","DOIUrl":"https://doi.org/10.1109/IRPS.1979.362888","url":null,"abstract":"In order to develop a non-destructive method to screen LEDs and couplers that degrade earlier under high temperature bias conditions, the relation between the degradation of emission efficiency and the initial reverse recovery time of LEDs has been investigated. The results show that those devices with shorter recovery time degrade faster.","PeriodicalId":161068,"journal":{"name":"17th International Reliability Physics Symposium","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124188350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Reliability of Gold Metallized Commercially Available Power GaAs FETs 金金属化商用功率GaAs场效应管的可靠性
17th International Reliability Physics Symposium Pub Date : 1979-04-01 DOI: 10.1109/IRPS.1979.362886
E. Cohen, A. Macpherson
{"title":"Reliability of Gold Metallized Commercially Available Power GaAs FETs","authors":"E. Cohen, A. Macpherson","doi":"10.1109/IRPS.1979.362886","DOIUrl":"https://doi.org/10.1109/IRPS.1979.362886","url":null,"abstract":"Commercially available 0.5 watt GaAs FETs with gold based refractory gate metallizations have been subjected to accelerated stress testing under r.f. operation at 8 GHz. The results of these tests indicate that a conservative estimate of the mean time to failure of these devices is 2.5 × 106 hours at 125°C channel temperature.","PeriodicalId":161068,"journal":{"name":"17th International Reliability Physics Symposium","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131204831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Failure Analysis Techniques and Failure Mechanisms Utilizing a Plasma Etcher 失效分析技术和失效机制利用等离子蚀刻
17th International Reliability Physics Symposium Pub Date : 1979-04-01 DOI: 10.1109/IRPS.1979.362889
J. Gajda, D. DeLorenzo, J. A. Wade
{"title":"Failure Analysis Techniques and Failure Mechanisms Utilizing a Plasma Etcher","authors":"J. Gajda, D. DeLorenzo, J. A. Wade","doi":"10.1109/IRPS.1979.362889","DOIUrl":"https://doi.org/10.1109/IRPS.1979.362889","url":null,"abstract":"The utilization of plasma etching for selective layer removal of semiconductor device passivation films, polysilicon or substrate silicon, is playing a more and more significant role in delineation of specific failure mechanisms or process introduced anomalies. The advantages of selective removal of materials without destroying the failure site or its morphology are discussed, as well as complementary techniques used in performance of the various analyses. Analysis results are given involving bipolar and FET structures that identify 1. Sites of metal alloy penetration causing excessive leakage currents in bipolar logic circuitry. 2. Opens in test site double level metal interconnection vias due to current stress. 3. Corrosion sites on interconnection metallurgy. 4. FET gate oxide quality after polysilicon gate electrode removal. 5 Test site C-4 terminal interconnection via opens.","PeriodicalId":161068,"journal":{"name":"17th International Reliability Physics Symposium","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129420845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Certain Failure Mechanisms in Two-Level Poly-Si Gate Structures - A Transmission Electron Microscopy Study 两能级多晶硅栅极结构的某些失效机制——透射电镜研究
17th International Reliability Physics Symposium Pub Date : 1979-04-01 DOI: 10.1109/IRPS.1979.362868
A. K. Sinha, T. Sheng, T. Shankoff, W. S. Lindenberger, E. Fuls, C. C. Chang
{"title":"Certain Failure Mechanisms in Two-Level Poly-Si Gate Structures - A Transmission Electron Microscopy Study","authors":"A. K. Sinha, T. Sheng, T. Shankoff, W. S. Lindenberger, E. Fuls, C. C. Chang","doi":"10.1109/IRPS.1979.362868","DOIUrl":"https://doi.org/10.1109/IRPS.1979.362868","url":null,"abstract":"In order to reveal lower-than-normal voltage oxide breakdown mechanisms in two-level overlapping poly-Si gate structures, we have examined high resolution cross-sections in the transmission electron microscope. It is shown that the gate oxide undercut of polyI prior to the reoxidation step can lead to a significant localized thinning and/or trapped voids in the regrown oxide.","PeriodicalId":161068,"journal":{"name":"17th International Reliability Physics Symposium","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130984912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ion Implanted P-Resistor Reliability 离子注入p电阻可靠性
17th International Reliability Physics Symposium Pub Date : 1979-04-01 DOI: 10.1109/IRPS.1979.362899
P. Chaudhari, G. Nelson, A. Nagarajan
{"title":"Ion Implanted P-Resistor Reliability","authors":"P. Chaudhari, G. Nelson, A. Nagarajan","doi":"10.1109/IRPS.1979.362899","DOIUrl":"https://doi.org/10.1109/IRPS.1979.362899","url":null,"abstract":"One of the key aspects of large scale integration in bipolar technology depends on the use of high valued resistors. Ion implantation can lead to higher valued resistors not possible with diffused technology. Two different process technologies, pre-emitter and post-emitter, for making ion implanted resistors I2R are described. Also described are measured profiles, reliability studies carried out on p-resistors made by the two technologies, a model describing the resistor drift, and the effect of annealing.","PeriodicalId":161068,"journal":{"name":"17th International Reliability Physics Symposium","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115956244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A New Cyclic Biased T.H.B. Test for Power Dissipating IC's 功耗集成电路的一种新的循环偏置T.H.B.测试
17th International Reliability Physics Symposium Pub Date : 1979-04-01 DOI: 10.1109/IRPS.1979.362880
T. Ajiki, M. Sugimoto, H. Higuchi, S. Kumada
{"title":"A New Cyclic Biased T.H.B. Test for Power Dissipating IC's","authors":"T. Ajiki, M. Sugimoto, H. Higuchi, S. Kumada","doi":"10.1109/IRPS.1979.362880","DOIUrl":"https://doi.org/10.1109/IRPS.1979.362880","url":null,"abstract":"As a test method for moisture resistance, conventional T.H.B. (Temperature, Humidity, Bias) Test is being widely used. However, in testing integrated circuits especially linear circuits, it is extremely difficult to put all of the circuit elements under reverse bias cutoff conditions. The T.H.B. Test is usually performed under an actual operating condition. As a result, the junction temperature increases due to a large power dissipation, and the humidity level in the devices decreases. Consequently, the test is not considered to be conducted under the intended high humidity condition. For that reason, the conventional T.H.B. Test is not thought to be a proper test method for integrated circuits*","PeriodicalId":161068,"journal":{"name":"17th International Reliability Physics Symposium","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131398205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Method of Determining Reliability Screens for Time Dependent Dielectric Breakdown 时变介质击穿可靠性屏的确定方法
17th International Reliability Physics Symposium Pub Date : 1979-04-01 DOI: 10.1109/IRPS.1979.362863
D. Crook
{"title":"Method of Determining Reliability Screens for Time Dependent Dielectric Breakdown","authors":"D. Crook","doi":"10.1109/IRPS.1979.362863","DOIUrl":"https://doi.org/10.1109/IRPS.1979.362863","url":null,"abstract":"Time dependent dielectric breakdown on MOS LSI circuits is a function of stress voltage, temperature, device area and latent defect density. A model for time dependent dielectric breakdown as a function of these parameters has been developed. This model has been empirically verified on test structures, as well as actual memory devices. A discussion of how this model is used to determine reliability screens for time dependent dielectric breakdown is presented.","PeriodicalId":161068,"journal":{"name":"17th International Reliability Physics Symposium","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132544064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 157
Electromigration of Sputtered Al-Si Alloy Films 溅射铝硅合金薄膜的电迁移
17th International Reliability Physics Symposium Pub Date : 1979-04-01 DOI: 10.1109/IRPS.1979.362872
E. Nagasawa, H. Okabayashi, T. Nozaki, K. Nikawa
{"title":"Electromigration of Sputtered Al-Si Alloy Films","authors":"E. Nagasawa, H. Okabayashi, T. Nozaki, K. Nikawa","doi":"10.1109/IRPS.1979.362872","DOIUrl":"https://doi.org/10.1109/IRPS.1979.362872","url":null,"abstract":"Electromigration experiments were conducted on sputtered Al-Si alloy films of different metallographical properties, particularly, various grain sizes. The observed failure mode and median time to failure were found to be strongly dependent on grain size and its homogeneity in the films. Results were obtained on temperature dependence of median time to failure and of the failure mode in fine grained films. These failure mode differences were found to be related to void growth directions in conductor stripe, which were dependent on test conditions.","PeriodicalId":161068,"journal":{"name":"17th International Reliability Physics Symposium","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134253562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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