{"title":"时变介质击穿可靠性屏的确定方法","authors":"D. Crook","doi":"10.1109/IRPS.1979.362863","DOIUrl":null,"url":null,"abstract":"Time dependent dielectric breakdown on MOS LSI circuits is a function of stress voltage, temperature, device area and latent defect density. A model for time dependent dielectric breakdown as a function of these parameters has been developed. This model has been empirically verified on test structures, as well as actual memory devices. A discussion of how this model is used to determine reliability screens for time dependent dielectric breakdown is presented.","PeriodicalId":161068,"journal":{"name":"17th International Reliability Physics Symposium","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1979-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"157","resultStr":"{\"title\":\"Method of Determining Reliability Screens for Time Dependent Dielectric Breakdown\",\"authors\":\"D. Crook\",\"doi\":\"10.1109/IRPS.1979.362863\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Time dependent dielectric breakdown on MOS LSI circuits is a function of stress voltage, temperature, device area and latent defect density. A model for time dependent dielectric breakdown as a function of these parameters has been developed. This model has been empirically verified on test structures, as well as actual memory devices. A discussion of how this model is used to determine reliability screens for time dependent dielectric breakdown is presented.\",\"PeriodicalId\":161068,\"journal\":{\"name\":\"17th International Reliability Physics Symposium\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1979-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"157\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"17th International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1979.362863\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"17th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1979.362863","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Method of Determining Reliability Screens for Time Dependent Dielectric Breakdown
Time dependent dielectric breakdown on MOS LSI circuits is a function of stress voltage, temperature, device area and latent defect density. A model for time dependent dielectric breakdown as a function of these parameters has been developed. This model has been empirically verified on test structures, as well as actual memory devices. A discussion of how this model is used to determine reliability screens for time dependent dielectric breakdown is presented.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
