17th International Reliability Physics Symposium最新文献

The Influence of Plastic Encapsulants and Passivation Layers on the Corrosion of Thin Aluminium Films Subjected to Humidity Stress 塑料封装剂和钝化层对湿应力作用下铝薄膜腐蚀的影响

17th International Reliability Physics Symposium Pub Date : 1979-04-24 DOI: 10.1109/IRPS.1979.362878

S. Sim, R. Lawson

{"title":"The Influence of Plastic Encapsulants and Passivation Layers on the Corrosion of Thin Aluminium Films Subjected to Humidity Stress","authors":"S. Sim, R. Lawson","doi":"10.1109/IRPS.1979.362878","DOIUrl":"https://doi.org/10.1109/IRPS.1979.362878","url":null,"abstract":"The study of moisture induced aluminium corrosion in the presence of passivation layers and plastic encapsulants has shown that the corrosion rate is determined by the surface conductivity of the water layer that forms on the die surface. The surface conductivity is determined by the external environment and the adhesion of the layer in contact with the die surface (which together control the water film), the impurities that enter the water film from the plastic or passivation layer and the applied bias. The impurities can accelerate the corrosion rate by breaking down protective oxides on the aluminium but they also can delay the onset of severe corrosion by forming space charges that limit the electrolytic currents that can flow. Silicone and silicone-epoxy resins give the best protection against corrosion when used alone followed by epoxy anhydride and epoxy novolac resins in that order. With the best passivation layer used, 1.8% phosphorous content CVD silicon dioxide, the lifetime was dependent on the choice of plastic encapsulant. The lifetime was only independent of the type of plastic encapsulant for die passivation layers containing high levels of impurity. The temperature dependence of the anodic and cathodic aluminium corrosion mechanisms is independent of the nature of the impurities found in a plastic encapsulated component and can be described by an activation energy of about 0.75 ev.","PeriodicalId":161068,"journal":{"name":"17th International Reliability Physics Symposium","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128422885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 28

Reliability Aspects of 0.5μm and 1.0μm Gate Low Noise GaAs FETs 0.5μm和1.0μm栅极低噪声GaAs场效应管的可靠性

17th International Reliability Physics Symposium Pub Date : 1979-04-24 DOI: 10.1109/IRPS.1979.362884

C. Huang, F. Kwan, S.Y. Wang, P. Galle, J. Barrera

引用次数: 3

On the Reliability of Power GaAs FETs 功率GaAs场效应管的可靠性研究

17th International Reliability Physics Symposium Pub Date : 1979-04-24 DOI: 10.1109/IRPS.1979.362885

I. Drukier, J. Silcox

引用次数: 19

Measurement of Alpha Particle Radioactivtiy in IC Device Packages IC器件封装中α粒子放射性的测量

17th International Reliability Physics Symposium Pub Date : 1979-04-24 DOI: 10.1109/IRPS.1979.362865

E. S. Meieran, P. Engel, T. May

引用次数: 17

Conductive Anodic Filaments in Reinforced Polymeric Dielectrics: Formation and Prevention 增强聚合物介质中的导电阳极细丝:形成与预防

17th International Reliability Physics Symposium Pub Date : 1979-04-24 DOI: 10.1109/IRPS.1979.362871

D. J. Lando, J. Mitchell, T. Welsher

{"title":"Conductive Anodic Filaments in Reinforced Polymeric Dielectrics: Formation and Prevention","authors":"D. J. Lando, J. Mitchell, T. Welsher","doi":"10.1109/IRPS.1979.362871","DOIUrl":"https://doi.org/10.1109/IRPS.1979.362871","url":null,"abstract":"The purpose of this paper is to report on a mode of failure observed during the life testing of epoxy-glass printed-circuit boards (PCB). Upon exposure to elevated humidity, circuits maintained under a dc bias have been observed(I-3) to develop either permanent or intermittent loss of insulation resistance. Visual examination has shown that this characteristic electrical behavior is accompanied by the formation of growths emanating from the positively biased conductors (anodes) and growing along the reinforcing glass fibers. We refer to these growths as conductive anodic filaments (CAF). In another paper presented at this meeting3, Lahti et al. have reported that this failure mode, which occurs at high humidity, is often nearly temperature independent. This failure mode is also of great concern since current trends in PCB applications, especially in the telecommunication field, involve operation in more humid environments, such as outdoor installations. Further, the trend toward lower power dissipation by components, which results in a low operating temperature, will also tend to make the operating humidity of the PCBs higher. In addition, the increased use of light-weight, water penneable housings is aggravating the situation. These trends have begun relatively recently and therefore, even though the number of field failures so far attributed to CAF is small, the situation is potentially serious. This paper addresses the following questions: 1. What material characteristics of PCB substrates make them susceptible to this mode of failure? 2. What is the mechanism of failure? 3.","PeriodicalId":161068,"journal":{"name":"17th International Reliability Physics Symposium","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125656660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 81

Autoclave vs. 85°C/85% R. H. Testing - A Comparison 高压灭菌器与85°C/85% rh测试-比较

17th International Reliability Physics Symposium Pub Date : 1979-04-01 DOI: 10.1109/IRPS.1979.362883

William J. McGarvey

引用次数: 7

The Chemistry of Failure Analysis 失效分析的化学原理

17th International Reliability Physics Symposium Pub Date : 1979-04-01 DOI: 10.1109/IRPS.1979.362894

M. Jacques

{"title":"The Chemistry of Failure Analysis","authors":"M. Jacques","doi":"10.1109/IRPS.1979.362894","DOIUrl":"https://doi.org/10.1109/IRPS.1979.362894","url":null,"abstract":"This paper discusses the chemistry of failure analysis in sufficient detail to serve as a practical guide for the failure analyst. It includes a discussion of the chemistry of plastic composition formulation. This discussion is preparatory to the main body of the paper which covers the chemistry and mechanics of decapsulation and, also, an explanation of the principles of chemical etch of semiconductor building blocks and interconnect materials. Included in the paper is a general procedure of decapsulation and several examples are contained in Table 1. Source materials are cited that will provide additional information on actual decapsulation procedures for thermoplastics and single and composite thermo-setting encapsulation systems. The list of chemicals employed in failure analysis has evolved over the years into a rather impressive list of toxic and extremely dangerous organic and inorganic chemicals. These chemicals when mixed in the proper proportions and used in appropriate environmental conditions are capable of selectively removing plastic encapsulations and semiconductor building blocks to uncover semiconductor failure mechanisms. The safe use of these chemicals and others that may be presented in the future can and will provide the analyst with an excellent tool for determining the precise cause of failure.","PeriodicalId":161068,"journal":{"name":"17th International Reliability Physics Symposium","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114554603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

Analysis of Accelerated Temperature Cycle Test Data Containing Different Failure Modes 含不同失效模式的加速温度循环试验数据分析

17th International Reliability Physics Symposium Pub Date : 1979-04-01 DOI: 10.1109/IRPS.1979.362900

G. A. Dodson

{"title":"Analysis of Accelerated Temperature Cycle Test Data Containing Different Failure Modes","authors":"G. A. Dodson","doi":"10.1109/IRPS.1979.362900","DOIUrl":"https://doi.org/10.1109/IRPS.1979.362900","url":null,"abstract":"This paper addresses the problem of separating out the failure distribution of each kind of failure observed in accelerated temperature-cycle aging of one assembly lot of a 16-lead molded DIP package. A failure distribution is established for each of five kinds of failure (i.e., failure modes) and at each of two different temperature-cycle aging conditions. From these separate and independent distributions, the distribution parameters and an acceleration factor are determined for each failure mode. The data are analyzed by use of the hazard plotting technique developed by Nelson.1 The necessary algorithms for hazard plotting are developed to handle data of the type obtained in this experiment. Two characteristics of the data that the algorithms take into consideration are first, it is grouped data (i.e., the number of failures within a time interval is the measured quantity) and second, the failures are effectively \"non-interfering\" (i.e., the occurrence of a failure for one failure mode does not interfere with either the aging or observation of other failure modes). In addition, it is further developed so that the results can be plotted on any of several standard probability papers (normal, log-normal, Weibull, etc.). The analysis of these aging data shows that there is wide variation in the acceleration factors, median lives and dispersions (sigmas) for the different failure modes. It further shows that these parameter differences account for much of the bimodal structure of the total or composite failure distribution.","PeriodicalId":161068,"journal":{"name":"17th International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130988712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

The use of Microfluorescence Analysis for Process Control in the Semiconductor Manufacturing Industry 微荧光分析在半导体制造业过程控制中的应用

17th International Reliability Physics Symposium Pub Date : 1979-04-01 DOI: 10.1109/IRPS.1979.362892

H. A. Froot

引用次数: 0

Diagnosis of Hybrid Microelectronics using Transmission Acoustic Microscopy 透射声显微镜诊断混合微电子

17th International Reliability Physics Symposium Pub Date : 1979-04-01 DOI: 10.1109/IRPS.1979.362890

C. S. Tsai, Chin C. Lee, Jung K. Wang

引用次数: 7