On the Reliability of Power GaAs FETs

17th International Reliability Physics Symposium Pub Date : 1979-04-24 DOI:10.1109/IRPS.1979.362885

I. Drukier, J. Silcox

引用次数: 19

Abstract

Accelerated life tests on power GaAs FETs have shown these devices to be reliable components. At operating temperatures of 125°C a MTTF of mid 106 hours is predicted. The activation energy of this process is 1.85ev with ¿n = 0.7. Failures are related to electromigration in the gate fingers.

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功率GaAs场效应管的可靠性研究

功率GaAs fet的加速寿命测试表明，这些器件是可靠的组件。在125°C的工作温度下，预计最长停留时间为106小时。该过程的活化能为1.85ev, n = 0.7。故障与栅指的电迁移有关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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17th International Reliability Physics Symposium

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