{"title":"Characteristics of a Surface Conductivity Moisture Monitor for Hermetic Integrated Circuit Packages","authors":"R. Lowry, L. A. Miller, A. Jonas, J. Bird","doi":"10.1109/IRPS.1979.362877","DOIUrl":"https://doi.org/10.1109/IRPS.1979.362877","url":null,"abstract":"An in-situ surface conductivity sensor for measuring water content of hermetic package ambients is described. Results of correlation experiments with mass spectroscopy and volume-effect sensors are presented. Sensor studies of water desorption and contamination by leached ions are discussed. The surface conductivity sensor is well-suited to defining moisture levels within all types of hermetic packages.","PeriodicalId":161068,"journal":{"name":"17th International Reliability Physics Symposium","volume":"282 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121333514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"PMOS Dynamic RAM Reliability = A Case Study","authors":"C. Green","doi":"10.1109/IRPS.1979.362896","DOIUrl":"https://doi.org/10.1109/IRPS.1979.362896","url":null,"abstract":"This paper summarizes the history of 21,504 beam-leaded, aluminum metal PMOS 1K dynamic RAM chips through 20,000 hours in a typical telephone central office application, and predicts subsequent failure rates by extrapolation from distribution models fit to the failure data. The memory chips were processed using essentially standard PMOS silicon gate, aluminum metal technology, but with Ti-Pt-Au beam leads applied for packaging in a 22-pin, 4-chip, ceramic substrate DIP. Major failure mechanisms exhibited by the 47 chips failing during the 20,000-hour field study included gate oxide shorts, hot-electron charging of gates left floating by missing contact windows (unique to the process used for these particular devices) and parasitic MOS transistors due to thinned field dielectric. Other failures were due to various anomolous defects. Characteristics of the failure mechanisms are discussed in some detail. Failure rates beyond the 20,000-hour point are predicted by fitting several distribution models to the data. The lognormal, logarithmic extreme value and Weibull distributions all fit the data quite well, particularly when the estimate of faulty subpopulation size for each failure mechanism is optimized. Treating the failure mechanisms independently results in prediction of lower long-term failure rates than similar treatment of all failures combined. Cumulative chip failure rate through 20,000 hours was 110 FITs, and the average failure rate between 10,000 and 20,000 hours was 37 FITs. Instantaneous failure rate is projected to be less than 10 FITs after five years of field operation.","PeriodicalId":161068,"journal":{"name":"17th International Reliability Physics Symposium","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121960154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Analysis of Dynamic RAM's by Use of Alpha Irradiation","authors":"G. Schindlbeck","doi":"10.1109/IRPS.1979.362867","DOIUrl":"https://doi.org/10.1109/IRPS.1979.362867","url":null,"abstract":"Alpha particles can cause soft errors in dynamic MOS-IC's through their high ionization rate. This mechanism can be used to inject disturb charges into a device thus enabling determination of the internal integrity of the device. Applying this method the electrical quality, yield limiting factors, and reliability problems of 16K RAM's were analyzed without restrictions upon the operating conditions of the devices. It can be distinguished between obvious device weaknesses, like unbalanced memory arrays and highly imperfect bit lines, or hidden weaknesses detectable only through statistical evaluations of the local distribution of soft errors. This work has been supported by the Federal Department of Research and Technology of the Federal Republic of Germany. The author alone is responsible for the content.","PeriodicalId":161068,"journal":{"name":"17th International Reliability Physics Symposium","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127768700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Moisture-Induced Aluminum Corrosion and Stress on the Chip in Plastic-Encapsulated LSIs","authors":"H. Inayoshi, K. Nishi, S. Okikawa, Y. Wakashima","doi":"10.1109/IRPS.1979.362879","DOIUrl":"https://doi.org/10.1109/IRPS.1979.362879","url":null,"abstract":"Stress of encapsulant resin which acts on LSI chip was measured to evaluate passivation defects by a new method. It was cleared that the resin thermal stress gave damage to the LSI passivation film and aluminum corrosion took place by moisture penetrating through the film damage up to the metal surface in a humid atmosphere. The stress values obtained by the new method for various resins showed good correlation to the passivation defect densities. When a resin with half stress was applied, the defect density was halved. To improve the moisture resistance of plastic-encapsulated LSIs, the application of the low stress resin is supposed to be a good method.","PeriodicalId":161068,"journal":{"name":"17th International Reliability Physics Symposium","volume":"147 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115036029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Metallographic Test for Glass-To-Metal Seal Quality","authors":"J. Mccormick, L. Zakraysek","doi":"10.1109/IRPS.1979.362870","DOIUrl":"https://doi.org/10.1109/IRPS.1979.362870","url":null,"abstract":"Glass-to-metal seals on IC lead frames, transistor headers and other electronic component packages make it possible to obtain electrical feed-thru while maintaining hermeticity throughout severe environmental exposure such as that required by MIL-STD-883. In the more exacting applications, the hermeticity requirement is most consistently met by the use of the so-called matched seal. Many of these seals use ASTM Alloy F15 (Kovar) and a glass with matching coefficient of expansion. In practice, industry specialists do the glass-seal work and the component fabricator uses the purchased part to complete a hermetic assembly. Despite the widespread, and long-standing development of glass-seal technology, the industry seems plagued with component failure due to loss of hermeticity. This study describes the use of metallographic techniques for seal quality determination.","PeriodicalId":161068,"journal":{"name":"17th International Reliability Physics Symposium","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116902688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Prince, J. Lathrop, F. W. Morgan, E. Royal, G. Witter
{"title":"Accelerated Stress Testing of Terrestrial Solar Cells","authors":"J. Prince, J. Lathrop, F. W. Morgan, E. Royal, G. Witter","doi":"10.1109/IRPS.1979.362874","DOIUrl":"https://doi.org/10.1109/IRPS.1979.362874","url":null,"abstract":"The results of a program to investigate the reliability characteristics of unencapsulated low-cost terrestrial solar cells using accelerated stress testing are presented. Four types of cells were investigated. Reliability (or parametric degradation) factors appropriate to the cell technologies and use conditions were studied and a schedule of accelerated stress tests was synthesized. An electrical measurement procedure capable of distinguishing small chanes in cell electrical parameters was established. A data analysis and management system was derived, and stress test fixturing and material flow procedures were set up after consideration was given to the number of cells to be stress tested and measured and the nature of the information to be obtained from the process. Based on both electrical parameters and metalization adherence strength, significant degradation was shown by some cell types in some stress tests. Other combinations of cell types and stress tests resulted in no detectable cell degradation. Analysis of the origins of the differences in degradation is continuing.","PeriodicalId":161068,"journal":{"name":"17th International Reliability Physics Symposium","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125726052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}