透射声显微镜诊断混合微电子

C. S. Tsai, Chin C. Lee, Jung K. Wang
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引用次数: 7

摘要

本文报道了利用150 MHz透射扫描声显微镜对混合微电子元件进行无损诊断的最新进展。对生产线上的薄膜电路、厚膜电路和多层片式电容器缺陷进行了声成像。与光学显微照片相反,声学显微照片显示了高度的对比。在多层结构中观察到很大的差分声衰减(通常为30 db),因此高度不均匀。对于厚膜电阻电路,声学显微照片的对比度是电阻值的敏感函数。还建立了一种简单的方法来确定缺陷位置(深度)和缺陷类型。我们认为透射声显微镜是一种非常有用和独特的技术,用于故障分析和混合微电子的质量控制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Diagnosis of Hybrid Microelectronics using Transmission Acoustic Microscopy
This paper reports further progress we have made most recently on nondestructive diagnosis of hybrid microelectronic components using a 150 MHz transmission scanning acoustic microscope. Acoustic imaging of defects in production-line thin-film circuits, thick-film circuits, and multilayer chip capacitors was carried out. Contrary to the optical micrographs, the acoustic micrographs recorded show a high degree of contrast. A large differential acoustic attenuation (typically 30 db) and thus a high degree of nonuniformity was observed in the multilayer structures. For a thick-film resistor circuit the contrast in the acoustic micrograph was found to be a sensitive function of the resistance value. A simple method has also been established to determine both the defect location (in depth) and the defect type. We conclude that transmission acoustic microscopy is a highly useful and unique technique for failure analysis and quality control of hybrid microelectronics.
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