17th International Reliability Physics Symposium最新文献_第2页

Ionic Contamination-Humidity Effects on GaAs FETs 离子污染-湿度对GaAs场效应管的影响

17th International Reliability Physics Symposium Pub Date : 1979-04-01 DOI: 10.1109/IRPS.1979.362881

W. Anderson, A. Christou, K. Sleger

引用次数: 5

Instability and Failure Mechanisms of Small Area, Nitride-Defined Schottky Barrier Diodes, in LSI Applications 小面积氮化肖特基势垒二极管在LSI应用中的不稳定性和失效机制

17th International Reliability Physics Symposium Pub Date : 1979-04-01 DOI: 10.1109/IRPS.1979.362898

S. U. Kim

引用次数: 0

Component/System Correlation of Alpha Induced Dynamic RAM Soft Failure Rates Alpha诱导动态RAM软故障率的组件/系统相关性

17th International Reliability Physics Symposium Pub Date : 1979-04-01 DOI: 10.1109/IRPS.1979.362866

C. C. Huang, A. J. Lewandowski, M. Nelson, S. R. Orr

{"title":"Component/System Correlation of Alpha Induced Dynamic RAM Soft Failure Rates","authors":"C. C. Huang, A. J. Lewandowski, M. Nelson, S. R. Orr","doi":"10.1109/IRPS.1979.362866","DOIUrl":"https://doi.org/10.1109/IRPS.1979.362866","url":null,"abstract":"Alpha particle induced upset of data stored in dynamic MDS RAMs and CCDs has been well documented. May and Woods (1) of Intel explained how the soft failure mechanism operates in the storage matrix of packaged devices, and presented convincing empirical evidence to substantiate their theoretical model. The semiconductor industry reacted to this phenomenon in several ways: by imposing alpha emission limits on their package vendors; increasing storage capacitance on vulnerable nodes with circuit design and/or processing innovations; initiating research on die coatings to serve as a barrier to incident alphas; informing customers who buy high density dynamic RAM and CCD storage devices in order to build large storage modules, that error correction schemes are mandatory. The bulk of the material so far published pertains to a phenomenological discussion at the device physics level. Adverse effects on system MDBF are only implied. This paper presents soft failure data obtained using low intensity polonium 210 and uranium 238 alpha sources on 4K and 16K dynamic M4S RAM and 64K CCD devices made by various semiconductor vendors. Experiments indicate that certain static NMOS RAM devices may also suffer alpha induced soft failures, particularly when operated in low supply voltage, battery back up data retention modes. Finally, soft failure rates developed by operating a 4M byte dynamic MOS RAM storage module in a read only mode at minimum specified supply voltages are checked for correlation with device level results.","PeriodicalId":161068,"journal":{"name":"17th International Reliability Physics Symposium","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133547468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

Analysis of Headspace Vapor in Sealed Electronic Packages using Plasma Chromotography Mass Spectroscopy 等离子体色谱质谱法分析密封电子封装中的顶空蒸气

17th International Reliability Physics Symposium Pub Date : 1979-04-01 DOI: 10.1109/IRPS.1979.362893

T. Carr

引用次数: 0

Water Vapor Sorption of Package Sealants 包装密封胶的水蒸气吸附

17th International Reliability Physics Symposium Pub Date : 1979-04-01 DOI: 10.1109/IRPS.1979.362876

R. Vasofsky

{"title":"Water Vapor Sorption of Package Sealants","authors":"R. Vasofsky","doi":"10.1109/IRPS.1979.362876","DOIUrl":"https://doi.org/10.1109/IRPS.1979.362876","url":null,"abstract":"A unique system, designed for simultaneously measuring mass change and residual gases of samples loaded from a controlled environment, was used in conducting outgassing and water vapor adsorption-desorption experiments on sealing glasses. Owens-Illinois XS-1175, a vitreous sealing glass, was glazed in vacuum, air, nitrogen and oxygen and Owens-Illinois CV-ll, a devitrifying sealing glass, was glazed in vacuum. The outgassing products for both glasses during glazing were primarily water vapor and carbon dioxide. After glazing, the glasses were exposed to 1.33 kPa (13,150 ppmv) of water vapor for 1 h at 25°C to measure the amount of water sorbed. The mass gains due to water uptake of XS-1175 glazed in vacuum, air and nitrogen were similar, ranging from 0.0044 to 0.0058% by sample weight. On the other hand, the mass gain due to water sorption of the sample glazed in oxygen was significantly less, 0.0005%. Scanning electron micrographs of the vacuum and oxygen glazed samples showed that the glass glazed in vacuum was very porous, appearing sponge-like in nature, while the oxygen glazed glass had a much less porous surface. In addition, during a water vapor exposure the mass gain of CV-ll, a devitrifying glass, was about 5 times greater compared with XS-1175, a vitreous glass glazed under similar conditions. Commercially glazed XS-1175 and KC-1 black ceramic lids were heated to 4300C to measure mass changes and outgassing products during sealing. Initially, water vapor and carbon dioxide were the major volatile components outgassed.","PeriodicalId":161068,"journal":{"name":"17th International Reliability Physics Symposium","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128514683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Scanning Infrared Microscopy Techniques for Semiconductor Thermal Analysis 用于半导体热分析的扫描红外显微镜技术

17th International Reliability Physics Symposium Pub Date : 1979-04-01 DOI: 10.1109/IRPS.1979.362891

C. A. "Cal" Lidback

{"title":"Scanning Infrared Microscopy Techniques for Semiconductor Thermal Analysis","authors":"C. A. \"Cal\" Lidback","doi":"10.1109/IRPS.1979.362891","DOIUrl":"https://doi.org/10.1109/IRPS.1979.362891","url":null,"abstract":"Because failure rates of component piece parts, particularly integrated circuits, increase as the ambient temperature increases, the component designer is committed to design his product to meet the input and output requirements with minimum thermal dissipation. Quantitative and qualitative thermal distribution information available through scanning infrared microscopy can support his objective. The failure analyst is directed to subtle failure sites which are made evident by abnormal thermal distributions. Thermal resistance studies involving a variety of normal production materials and processes are possible. Thermal resistance has been shown to be a variable dependent upon die area. Thermal resistance also varies depending upon a multitude of component manufacturing variables. The data is most meaningful when measured using standard product drawn from shippable lots, which is easily accomplished using a scanning infrared microscope. The scanning infrared microscope has been found to be an effective tool for solving. thermal management problems in semiconductor components. The techniques described here can be modified and extended to meet the thermal management challenges in all sectors of the electronics industry.","PeriodicalId":161068,"journal":{"name":"17th International Reliability Physics Symposium","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126066544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

GaAs Medium Scale Integrated Circuit Reliability GaAs中规模集成电路可靠性

17th International Reliability Physics Symposium Pub Date : 1979-04-01 DOI: 10.1109/IRPS.1979.362887

P. Froess, A. Chu

引用次数: 1

Effect of Palladium as a Corrosion Inhibitor in Chromium Thin Film Systems 钯作为缓蚀剂在铬薄膜体系中的作用

17th International Reliability Physics Symposium Pub Date : 1979-04-01 DOI: 10.1109/IRPS.1979.362882

D. J. Sharp

引用次数: 0

Reliability of LSI Memory Circuits Exposed to Laser Cutting 激光切割下LSI存储电路的可靠性

17th International Reliability Physics Symposium Pub Date : 1979-04-01 DOI: 10.1109/IRPS.1979.362897

M. Rand

引用次数: 9

The Characteristic Wearout Process in Epoxy-Glass Printed Circuits for High Density Electronic Packaging 高密度电子封装用环氧玻璃印刷电路的特性损耗过程

17th International Reliability Physics Symposium Pub Date : 1979-04-01 DOI: 10.1109/IRPS.1979.362869

J. Lahti, R. Delaney, J. Hines

引用次数: 53