{"title":"功率GaAs场效应管的可靠性研究","authors":"I. Drukier, J. Silcox","doi":"10.1109/IRPS.1979.362885","DOIUrl":null,"url":null,"abstract":"Accelerated life tests on power GaAs FETs have shown these devices to be reliable components. At operating temperatures of 125°C a MTTF of mid 106 hours is predicted. The activation energy of this process is 1.85ev with ¿n = 0.7. Failures are related to electromigration in the gate fingers.","PeriodicalId":161068,"journal":{"name":"17th International Reliability Physics Symposium","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1979-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"On the Reliability of Power GaAs FETs\",\"authors\":\"I. Drukier, J. Silcox\",\"doi\":\"10.1109/IRPS.1979.362885\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Accelerated life tests on power GaAs FETs have shown these devices to be reliable components. At operating temperatures of 125°C a MTTF of mid 106 hours is predicted. The activation energy of this process is 1.85ev with ¿n = 0.7. Failures are related to electromigration in the gate fingers.\",\"PeriodicalId\":161068,\"journal\":{\"name\":\"17th International Reliability Physics Symposium\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1979-04-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"17th International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1979.362885\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"17th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1979.362885","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 19
摘要
功率GaAs fet的加速寿命测试表明，这些器件是可靠的组件。在125°C的工作温度下，预计最长停留时间为106小时。该过程的活化能为1.85ev, n = 0.7。故障与栅指的电迁移有关。
Accelerated life tests on power GaAs FETs have shown these devices to be reliable components. At operating temperatures of 125°C a MTTF of mid 106 hours is predicted. The activation energy of this process is 1.85ev with ¿n = 0.7. Failures are related to electromigration in the gate fingers.
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