Reliability of Gold Metallized Commercially Available Power GaAs FETs

17th International Reliability Physics Symposium Pub Date : 1979-04-01 DOI:10.1109/IRPS.1979.362886

E. Cohen, A. Macpherson

引用次数: 8

Abstract

Commercially available 0.5 watt GaAs FETs with gold based refractory gate metallizations have been subjected to accelerated stress testing under r.f. operation at 8 GHz. The results of these tests indicate that a conservative estimate of the mean time to failure of these devices is 2.5 × 106 hours at 125°C channel temperature.

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金金属化商用功率GaAs场效应管的可靠性

商用的0.5瓦GaAs fet与金基难熔栅金属化已经在8 GHz射频工作下进行了加速应力测试。这些试验结果表明，在125°C通道温度下，这些器件的平均失效时间保守估计为2.5 × 106小时。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

17th International Reliability Physics Symposium

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