{"title":"金金属化商用功率GaAs场效应管的可靠性","authors":"E. Cohen, A. Macpherson","doi":"10.1109/IRPS.1979.362886","DOIUrl":null,"url":null,"abstract":"Commercially available 0.5 watt GaAs FETs with gold based refractory gate metallizations have been subjected to accelerated stress testing under r.f. operation at 8 GHz. The results of these tests indicate that a conservative estimate of the mean time to failure of these devices is 2.5 × 106 hours at 125°C channel temperature.","PeriodicalId":161068,"journal":{"name":"17th International Reliability Physics Symposium","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1979-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Reliability of Gold Metallized Commercially Available Power GaAs FETs\",\"authors\":\"E. Cohen, A. Macpherson\",\"doi\":\"10.1109/IRPS.1979.362886\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Commercially available 0.5 watt GaAs FETs with gold based refractory gate metallizations have been subjected to accelerated stress testing under r.f. operation at 8 GHz. The results of these tests indicate that a conservative estimate of the mean time to failure of these devices is 2.5 × 106 hours at 125°C channel temperature.\",\"PeriodicalId\":161068,\"journal\":{\"name\":\"17th International Reliability Physics Symposium\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1979-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"17th International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1979.362886\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"17th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1979.362886","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Reliability of Gold Metallized Commercially Available Power GaAs FETs
Commercially available 0.5 watt GaAs FETs with gold based refractory gate metallizations have been subjected to accelerated stress testing under r.f. operation at 8 GHz. The results of these tests indicate that a conservative estimate of the mean time to failure of these devices is 2.5 × 106 hours at 125°C channel temperature.
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