{"title":"溅射铝硅合金薄膜的电迁移","authors":"E. Nagasawa, H. Okabayashi, T. Nozaki, K. Nikawa","doi":"10.1109/IRPS.1979.362872","DOIUrl":null,"url":null,"abstract":"Electromigration experiments were conducted on sputtered Al-Si alloy films of different metallographical properties, particularly, various grain sizes. The observed failure mode and median time to failure were found to be strongly dependent on grain size and its homogeneity in the films. Results were obtained on temperature dependence of median time to failure and of the failure mode in fine grained films. These failure mode differences were found to be related to void growth directions in conductor stripe, which were dependent on test conditions.","PeriodicalId":161068,"journal":{"name":"17th International Reliability Physics Symposium","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1979-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Electromigration of Sputtered Al-Si Alloy Films\",\"authors\":\"E. Nagasawa, H. Okabayashi, T. Nozaki, K. Nikawa\",\"doi\":\"10.1109/IRPS.1979.362872\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electromigration experiments were conducted on sputtered Al-Si alloy films of different metallographical properties, particularly, various grain sizes. The observed failure mode and median time to failure were found to be strongly dependent on grain size and its homogeneity in the films. Results were obtained on temperature dependence of median time to failure and of the failure mode in fine grained films. These failure mode differences were found to be related to void growth directions in conductor stripe, which were dependent on test conditions.\",\"PeriodicalId\":161068,\"journal\":{\"name\":\"17th International Reliability Physics Symposium\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1979-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"17th International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1979.362872\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"17th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1979.362872","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electromigration experiments were conducted on sputtered Al-Si alloy films of different metallographical properties, particularly, various grain sizes. The observed failure mode and median time to failure were found to be strongly dependent on grain size and its homogeneity in the films. Results were obtained on temperature dependence of median time to failure and of the failure mode in fine grained films. These failure mode differences were found to be related to void growth directions in conductor stripe, which were dependent on test conditions.
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