两能级多晶硅栅极结构的某些失效机制——透射电镜研究

17th International Reliability Physics Symposium Pub Date : 1979-04-01 DOI:10.1109/IRPS.1979.362868

A. K. Sinha, T. Sheng, T. Shankoff, W. S. Lindenberger, E. Fuls, C. C. Chang

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引用次数: 1

摘要

为了揭示两能级重叠多晶硅栅极结构中低于正常电压的氧化物击穿机制，我们在透射电子显微镜下检查了高分辨率的横截面。结果表明，在再氧化步骤之前，聚i的栅极氧化侧切可导致再生氧化物中显着的局部变薄和/或被捕获的空隙。

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Certain Failure Mechanisms in Two-Level Poly-Si Gate Structures - A Transmission Electron Microscopy Study

In order to reveal lower-than-normal voltage oxide breakdown mechanisms in two-level overlapping poly-Si gate structures, we have examined high resolution cross-sections in the transmission electron microscope. It is shown that the gate oxide undercut of polyI prior to the reoxidation step can lead to a significant localized thinning and/or trapped voids in the regrown oxide.

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17th International Reliability Physics Symposium

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