2023 IEEE Latin American Electron Devices Conference (LAEDC)最新文献_第3页

A Multi-Stage CTLE Design and Optimization for PCI Express Gen6.0 Link Equalization PCI Express Gen6.0链路均衡的多级CTLE设计与优化

2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209113

Karla G. López-Araiza, F. Rangel-Patiño, Jorge E. Ascencio-Blancarte, Edgar-Andrei Vega-Ochoa, J. Rayas-Sánchez, O. Longoria-Gandara

{"title":"A Multi-Stage CTLE Design and Optimization for PCI Express Gen6.0 Link Equalization","authors":"Karla G. López-Araiza, F. Rangel-Patiño, Jorge E. Ascencio-Blancarte, Edgar-Andrei Vega-Ochoa, J. Rayas-Sánchez, O. Longoria-Gandara","doi":"10.1109/LAEDC58183.2023.10209113","DOIUrl":"https://doi.org/10.1109/LAEDC58183.2023.10209113","url":null,"abstract":"The continuously increasing bandwidth demand from new applications has led to the development of the new peripheral component interconnect express (PCIe) Gen6, reaching data rates of 64 giga-transfers per second (GT/s) and adopting the pulse amplitude modulation 4-level (PAM4) signaling scheme. While PAM4 solves the bandwidth requirements, it brings new challenges for the physical channel design. PAM4 is more susceptible to errors due to various noise sources caused by reduced voltage (and timing) ranges, yielding a higher bit error rate (BER). It also introduces new challenges in slicers, transition jitter, and equalizers, making of equalization (EQ) a critical process for PAM4 signaling. In this paper, we propose a multistage continuous-time linear equalizer (CTLE) with high-band, mid-band, and low-band frequency boost stages to deal with highly lossy channels. Given the complexity of EQ of multi-level signals, optimization techniques are used, including an efficient optimization of the transmitter finite impulse response (FIR) filter and the receiver CTLE tuning.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128546648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of the thermal annealing temperature on the luminescent and morphological properties of silicon rich oxide bilayer structures. 热退火温度对富硅氧化物双层结构发光性能和形态性能的影响。

2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209139

J. juan, Avilés Bravo, J. Federico, Ramirez Rios, A. Sánchez, M. Moreno, L. P. Huerta

{"title":"Effect of the thermal annealing temperature on the luminescent and morphological properties of silicon rich oxide bilayer structures.","authors":"J. juan, Avilés Bravo, J. Federico, Ramirez Rios, A. Sánchez, M. Moreno, L. P. Huerta","doi":"10.1109/LAEDC58183.2023.10209139","DOIUrl":"https://doi.org/10.1109/LAEDC58183.2023.10209139","url":null,"abstract":"This work studies the effect of the thermal annealing temperature on the optical and morphological properties of SR$mathrm{O}_{mathrm{x}}$/SR$mathrm{O}_{mathrm{y}}$ bilayer structures when the SR$mathrm{O}_{mathrm{y}}$ contains a high silicon excess. SR$mathrm{O}_{mathrm{x}}$/SR$mathrm{O}_{mathrm{y}}$ bilayer structures were deposited by low pressure chemical vapor deposition and then thermally annealed at temperatures ranging from 900-1100 0C. In addition, $mathrm{S}mathrm{R}mathrm{O}_{mathrm{x}}$ and SR$mathrm{O}_{mathrm{y}}$ monolayers were deposited for comparison. The refraction index and the average roughness decrease when the thermal annealing temperature increases as a result of structural changes within the SR$mathrm{O}_{mathrm{x}}$/SR$mathrm{O}_{mathrm{y}}$ bilayers. A two-fold improvement in the photoluminescence (PL) intensity (65 to 136 a.u/nm) was obtained as the annealing temperature is reduced from 1100 to 1050°c. A relationship between PL emission and surface morphology was analyzed.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126777515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Digital twin of electrical motorcycle battery charger as AC Load in a Microgrid Based on Renewable Energy 基于可再生能源的微电网中摩托车蓄电池充电器作为交流负荷的数字孪生

2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10208283

Alcides Amado Herrera-Guerra, E. Henao-Bravo, J. Villegas-Ceballos

引用次数: 0

Development of Drop-On-Demand Inkjet Process for the Fabrication of Thin-Film Printed Devices 薄膜印刷器件按需喷墨工艺的发展

2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10208285

S. I. Garduño, Angel Sacramento-Orduño, M. Ramírez-Como, M. I. Reyes-Valderrama, V. Rodríguez-Lugo, Magali Estrada

{"title":"Development of Drop-On-Demand Inkjet Process for the Fabrication of Thin-Film Printed Devices","authors":"S. I. Garduño, Angel Sacramento-Orduño, M. Ramírez-Como, M. I. Reyes-Valderrama, V. Rodríguez-Lugo, Magali Estrada","doi":"10.1109/LAEDC58183.2023.10208285","DOIUrl":"https://doi.org/10.1109/LAEDC58183.2023.10208285","url":null,"abstract":"The main benefit of inkjet printing (IJP) lies in its ability to eliminate the photolithography and etching processes that are fundamental to silicon manufacturing technology. This is due to the direct deposition of solution-processed materials in predefined patterns. Although IJP has been employed in the production of various thin-film devices (TFD), there are still significant challenges in achieving fully printed TFDs. These include adjusting the rheological properties of formulated inks with drop-on-demand (DoD) printers and developing a comprehensive understanding of the parameters and conditions required for the IJP process to yield a desired morphology, film thickness, and pattern area uniformity. This investigation proposes to develop a process for the IJP of solution-processed materials, considering not only the ink rheological properties but also the parameters and setup conditions of the DoD printer employed. Commercial inks with specific rheological properties for IJP are used to print materials patterns with different resolutions, under continuous ejection conditions. The morphology and film thickness variations of the printed material are characterized by employing atomic force microscopy, ellipsometry, and optical microscopy. The obtained results depend on the rheological properties and solid content in the ink, as well as the configured parameters of the DoD printer. These findings can provide valuable evidence for attaining optimal conditions to enhance the surface wettability and develop the stacking of printed patterns of different materials. The focus of this work is on the fabrication of TFDs through a complete IJP process and improving their performance.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127724075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Implementation of a ROS Node for Roaming Between APs for an Autonomous Mobile Robot 自主移动机器人在ap间漫游ROS节点的实现

2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209140

L. Calle, Jordi Castel, M. Amaya

{"title":"Implementation of a ROS Node for Roaming Between APs for an Autonomous Mobile Robot","authors":"L. Calle, Jordi Castel, M. Amaya","doi":"10.1109/LAEDC58183.2023.10209140","DOIUrl":"https://doi.org/10.1109/LAEDC58183.2023.10209140","url":null,"abstract":"The wide field of implementation of mobile robotics has increased the need for remote interconnection of a control and visualization station with the robot to monitor the data acquired by the robot’s peripherals, with wireless networks based on the 802.11 protocol being the most optimal for its ease of implementation, bandwidth and operating frequencies. Within these networks, effective service transfer between the Access Points and the robot must be sought so as not to lose communication and for it to send the data in real time by it. For this reason, in this article the implementation of a ROS node that performs the Roaming process based on the intensity of the signal received RSSI from the Access Points of the network is presented. This node runs in parallel to the teleoperated and autonomous operation of the robot. With this node, it was possible to maintain an average link status of 81.15%, signal strength 53.18 dBm, and throughput for the download link of 163.45 Kbps and upload link of 13.45 Mbps, sufficient to maintain a stable interconnection between the control and visualization station and the robot.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122943872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Performance Germanium P-I-N Photodiodes for High-Speed, Hard X-Ray Imaging 用于高速硬x射线成像的高性能锗P-I-N光电二极管

2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209127

Ziang Guo, Sergei Mistyuk, A. Carpenter, C. Hunt

引用次数: 0

Development of Simplified Lumbar Spine Mechanism Implemented with Tendon-Driven Motion 以肌腱驱动运动实现的简化腰椎机构的发展

2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209122

Ruben Florez, Facundo Palomino-Quispe, Thuanne Paixão, Ana Beatriz Alvarez, Lucas Angst, Luis Maggi

引用次数: 0

Thermal Effects in Fully-Depleted SOI Devices 完全耗尽SOI器件中的热效应

2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209114

Ziyi Wang, D. Vasileska, Caroline S. Soares, G. Wirth, Jairo Mendez Villanueva, M. Pavanello, M. Povolotskyi

引用次数: 0

Non-iterative parameter extraction method based on the single diode model (SDM). 基于单二极管模型(SDM)的非迭代参数提取方法。

2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209109

Manuel J Heredia-Rios, Luis Hernandez-Matinez, M. Linares-Aranda, M. Moreno-Moreno

{"title":"Non-iterative parameter extraction method based on the single diode model (SDM).","authors":"Manuel J Heredia-Rios, Luis Hernandez-Matinez, M. Linares-Aranda, M. Moreno-Moreno","doi":"10.1109/LAEDC58183.2023.10209109","DOIUrl":"https://doi.org/10.1109/LAEDC58183.2023.10209109","url":null,"abstract":"Currently, the analysis of photovoltaic devices that convert light energy into electrical energy is of great importance, as efforts are being made to reduce global pollution. In this regard, various tools such as software, models, and simulators have been developed that allow for the understanding and improvement of the efficiency of these devices. Such tools are a valuable resource for research and development in the field of photovoltaic solar energy. This paper presents a model that allows for the analysis of the I-V and P-V curves’ behavior under different radiation and temperature conditions, as well as the influence of parameters that describe the single diode model. For this purpose, the commercial RTC France solar cell and the Kyocera 200GT solar panel, which are among the most reported in the literature, were used as study objects. The results obtained through the proposed model contribute to the understanding of the factors that affect the efficiency of photovoltaic devices and can be of great utility for the design and optimization of solar energy systems.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115615332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Transconductance-to-Current Ratio Based Threshold Voltage Extraction in MOSFETs from Linear to Saturation Modes 基于跨导电流比的mosfet从线性到饱和模式阈值电压提取

2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209129

M. Bucher, N. Makris, Loukas Chevas

引用次数: 0