Effect of the thermal annealing temperature on the luminescent and morphological properties of silicon rich oxide bilayer structures.

2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI:10.1109/LAEDC58183.2023.10209139

J. juan, Avilés Bravo, J. Federico, Ramirez Rios, A. Sánchez, M. Moreno, L. P. Huerta

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引用次数: 1

Abstract

This work studies the effect of the thermal annealing temperature on the optical and morphological properties of SR$\mathrm{O}_{\mathrm{x}}$/SR$\mathrm{O}_{\mathrm{y}}$ bilayer structures when the SR$\mathrm{O}_{\mathrm{y}}$ contains a high silicon excess. SR$\mathrm{O}_{\mathrm{x}}$/SR$\mathrm{O}_{\mathrm{y}}$ bilayer structures were deposited by low pressure chemical vapor deposition and then thermally annealed at temperatures ranging from 900-1100 0C. In addition, $\mathrm{S}\mathrm{R}\mathrm{O}_{\mathrm{x}}$ and SR$\mathrm{O}_{\mathrm{y}}$ monolayers were deposited for comparison. The refraction index and the average roughness decrease when the thermal annealing temperature increases as a result of structural changes within the SR$\mathrm{O}_{\mathrm{x}}$/SR$\mathrm{O}_{\mathrm{y}}$ bilayers. A two-fold improvement in the photoluminescence (PL) intensity (65 to 136 a.u/nm) was obtained as the annealing temperature is reduced from 1100 to 1050°c. A relationship between PL emission and surface morphology was analyzed.

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热退火温度对富硅氧化物双层结构发光性能和形态性能的影响。

本文研究了SR$\ mathm {O}_{\ mathm {x}}$/SR$\ mathm {O}_{\ mathm {y}}$双分子层结构在SR$\ mathm {O}_{\ mathm {y}}$中含有高硅过量时，热退火温度对其光学和形态学性质的影响。采用低压化学气相沉积法沉积SR$\ mathm {O}_{\ mathm {x}}$/SR$\ mathm {O}_{\ mathm {y}}$双分子层结构，然后在900 ~ 1100℃范围内进行热退火。此外，还沉积了$\mathrm{S}\mathrm{R}\mathrm{O}_{\mathrm{x}}$和SR$\mathrm{O}_{\mathrm{y}}$单层进行比较。随着退火温度的升高，SR$\ mathm {O}_{\ mathm {x}}$/SR$\ mathm {O}_{\ mathm {y}}$双层结构的变化导致折射率和平均粗糙度降低。当退火温度从1100℃降低到1050℃时，光致发光强度(65 ~ 136 a.u/nm)提高了两倍。分析了发光强度与表面形貌的关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2023 IEEE Latin American Electron Devices Conference (LAEDC)

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