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Experimental Analysis of HfO2/X ReRAM devices by the Capacitance Measurements HfO2/X ReRAM器件的电容测量实验分析
2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209123
F. Costa, Aseel Zeinati, R. Trevisoli, D. Misra, R. Doria
{"title":"Experimental Analysis of HfO2/X ReRAM devices by the Capacitance Measurements","authors":"F. Costa, Aseel Zeinati, R. Trevisoli, D. Misra, R. Doria","doi":"10.1109/LAEDC58183.2023.10209123","DOIUrl":"https://doi.org/10.1109/LAEDC58183.2023.10209123","url":null,"abstract":"The main objective of this work is to present an analysis of the switching properties in Resistive Random-Access-Memory devices through the capacitance measurements of the metal-insulator-metal structure. The analysis was carried out in two devices with different insulating layers, one composed of H-plasma-treated $mathrm{H}mathrm{f}mathrm{O}_{2}$ and the other with a stoichiometric $mathrm{H}mathrm{f}mathrm{O}_{2}$. The device with a higher quantity of oxygen vacancy related defects in the insulator $(mathrm{H}mathrm{f}mathrm{O}_{2}mathrm{w}/mathrm{t}mathrm{r}mathrm{t})$ presents a wider spread of the capacitance with the application of a range of varying pulse widths. An increase in the capacitance from 3.904 to 3.917 pF$/mu mathrm{m}^{2}$ was observed for the same device when it was subjected to a 144 $mu mathrm{s}$ pulse width, demonstrating a conductance quantization required for the application in in-memory computing systems.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126965127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Implementation of Step-Hetero-Oxide & Dual Material Gate Designs on Lateral β-Ga2O3 MOSFET for Terahertz Applications 用于太赫兹应用的横向β-Ga2O3 MOSFET阶梯异质氧化物和双材料栅极设计的实现
2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209134
Priyanshi Goyal, H. Kaur
{"title":"Implementation of Step-Hetero-Oxide & Dual Material Gate Designs on Lateral β-Ga2O3 MOSFET for Terahertz Applications","authors":"Priyanshi Goyal, H. Kaur","doi":"10.1109/LAEDC58183.2023.10209134","DOIUrl":"https://doi.org/10.1109/LAEDC58183.2023.10209134","url":null,"abstract":"The work presents extensive simulations to study the impact of Step-Hetero-Oxide and Dual Material Gate designs on lateral β-Ga2O3 MOSFET. Various device attributes of the proposed device are examined and compared with those obtained for conventional device. Furthermore, key metrics such as cut-off frequency, transconductance gain product and gain bandwidth product etc., that are critical for assessing high frequency performance of the device are also evaluated. It is noteworthy to mention that the proposed device demonstrates drastic improvement in high frequency metrics and it is apparent that the proposed device is a promising design for high frequency switching applications.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114201049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Real-Time Wheelchair Controller Based on POF-Based Pressure Sensors 基于pof压力传感器的实时轮椅控制器
2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209115
A. X. González-Cely, Cristian Felipe Blanco-Díaz, Díaz Camilo A.R., T. Bastos-Filho
{"title":"Real-Time Wheelchair Controller Based on POF-Based Pressure Sensors","authors":"A. X. González-Cely, Cristian Felipe Blanco-Díaz, Díaz Camilo A.R., T. Bastos-Filho","doi":"10.1109/LAEDC58183.2023.10209115","DOIUrl":"https://doi.org/10.1109/LAEDC58183.2023.10209115","url":null,"abstract":"The design of electrical wheelchair controllers remains a challenge for the scientific community. In recent years, Polymer Optical Fiber (POF)-based sensors have been used for biomedical applications, however, the application of these types of sensors for the control of assistive devices has been little explored. For this reason, this work proposes the design and validation of a fuzzy logic controller that uses information from an array of POF-based sensors located in a pillow, which is used for wheelchair control in four directions (right, left, forward and stop) by using neck movements. The results allow concluding that the system is fast, accurate, and reliable. This work presents a contribution related to the design of assistive devices based on optical fiber sensors and focuses on people with upper- and lower-limb mobility restrictions. Future studies will address the evaluation of the system for people with disabilities.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"16 5-6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114025957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
DC Biased Field Plate RESURF for Further RDSON Reduction of LDMOS Transistors 进一步降低LDMOS晶体管RDSON的直流偏置场极板重构
2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10208286
Wendi Wang, Z. Shen, I. Brown
{"title":"DC Biased Field Plate RESURF for Further RDSON Reduction of LDMOS Transistors","authors":"Wendi Wang, Z. Shen, I. Brown","doi":"10.1109/LAEDC58183.2023.10208286","DOIUrl":"https://doi.org/10.1109/LAEDC58183.2023.10208286","url":null,"abstract":"A new RESURF variant concept termed DC Biased Field Plate RESURF (BFP-RESURF) is proposed and studied through TCAD simulation in this work. The new LDMOS device structure features multiple field plates over the drift region that are biased at constant voltages. Significant reduction of ${mathrm {R}}_{{mathrm {DSON}}}$ can be achieved by a more ideal electric field profile and an accumulation channel induced by the BFPs. Simulation study indicates that the new BFP-LDMOS offers a specific ${mathrm {R}}_{{mathrm {DSON}}}$ of 58 m$Omega$. m${mathrm {}}m ^{2}$ comparing to 91 m$Omega$. m${mathrm {m}}^{2}$ of the conventional LDMOS, a 1.6X reduction at a BV of 100V. The concept could be further extended to a wider range of BV ratings, the ${mathrm {R}}_{{mathrm {DSON}}}$ benefit becomes more pronounced as BV goes higher. The switching performance shows no obvious difference between the BFP and standard LDMOS. The BFP-RESURF concept is completely compatible with conventional BCDMOS processes and scalable over a wide range of voltage ratings.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124471716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
TCAD Investigation of Step-Oxide and Asymmetric Doping Design with Electrode Engineering on Lateral β-Ga2O3 MOSFET for Terahertz Applications 基于电极工程的太赫兹侧型β-Ga2O3 MOSFET阶梯氧化和不对称掺杂设计的TCAD研究
2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209136
Priyanshi Goyal, H. Kaur
{"title":"TCAD Investigation of Step-Oxide and Asymmetric Doping Design with Electrode Engineering on Lateral β-Ga2O3 MOSFET for Terahertz Applications","authors":"Priyanshi Goyal, H. Kaur","doi":"10.1109/LAEDC58183.2023.10209136","DOIUrl":"https://doi.org/10.1109/LAEDC58183.2023.10209136","url":null,"abstract":"This work presents exhaustive TCAD investigation of Step-Oxide- Dual Material Gate with Asymmetric Doping engineering on lateral $beta-Ga_{2}O_{3}$ MOSFET. The objective of this work is to achieve high frequency performance. Several device attributes such as output and transfer characteristics, transconductance, parasitic capacitances and cut-off frequency etc., have been studied. Further, various critical figure of merits such as transconductance frequency product, gain bandwidth product etc., have also been obtained. A comparison of the proposed device is drawn with the conventional device. The results highlight that the proposed device is a promising design strategy for RF applications.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125455380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IoT-Based Neonatal Incubator Monitoring System 基于物联网的新生儿培养箱监测系统
2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209121
Alisson Waleska Martínez, Fernanda De Lourdes Cáceres, Kevin Fabricio Martínez
{"title":"IoT-Based Neonatal Incubator Monitoring System","authors":"Alisson Waleska Martínez, Fernanda De Lourdes Cáceres, Kevin Fabricio Martínez","doi":"10.1109/LAEDC58183.2023.10209121","DOIUrl":"https://doi.org/10.1109/LAEDC58183.2023.10209121","url":null,"abstract":"Neonatal incubators are essential in neonatology rooms and, as they are life support equipment, they require a maintenance frequency of at least every six months to guarantee their performance and safety. To analyze them, several devices exist designed to measure parameters such as temperature, humidity, and noise level inside the baby’s chamber. A complete analysis consists of 9 tests with a duration of 5 hours and 56 minutes overall. During this time, the workflow of the incubator is interrupted. The objective of this research is to develop an IoT-based prototype capable of monitoring the parameters inside the chamber; without stopping the operation of the equipment and that provides the security of not affecting the health of the premature baby. The IoT architecture was designed and the safety criteria for each component used to build the prototype were determined. Experimentation was used to perform tests in simulated environments and in a real environment. The results measured by the prototype were compared with those obtained by the certified measurement instrument Fluke INCU II. The values were compared using non-parametric statistic analysis to determine points for improvement.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"933 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133384328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A proposed STEM program to make institutions more inclusive for people with visual and physical disabilities in Panama 一项拟议的STEM项目，旨在使巴拿马的机构对视力和身体残疾的人更具包容性
2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209135
V. Serrano, Vladimir Villarreal, L. Muñoz, K. Tsakalis
{"title":"A proposed STEM program to make institutions more inclusive for people with visual and physical disabilities in Panama","authors":"V. Serrano, Vladimir Villarreal, L. Muñoz, K. Tsakalis","doi":"10.1109/LAEDC58183.2023.10209135","DOIUrl":"https://doi.org/10.1109/LAEDC58183.2023.10209135","url":null,"abstract":"STEM programs have attracted popularity among educational institutions in the recent years. Not only because of their interest in seeking new strategies to teach Science, Technology, Engineering and Mathematics, but also because there is constant demand of professionals in those areas. In this paper, a STEM program is proposed to involve the participation of university and high school students and professors, a non profit organization with people with disabilities, and community service to solve the most basic problems that disable people face in educational institutions in Panama.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125603691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation and Operational Evaluation of Distributed Storage Devices Connected to a Direct Current Distribuition Nanogrid 直流分布纳米电网分布式存储装置的仿真与运行评估
2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209107
João Paulo de Andrade Machado, Felipe Cabral Reis, Arthur Fonseca Côrrea, Lucas Dos Santos Bulhosa, W. Macêdo, M. Galhardo
{"title":"Simulation and Operational Evaluation of Distributed Storage Devices Connected to a Direct Current Distribuition Nanogrid","authors":"João Paulo de Andrade Machado, Felipe Cabral Reis, Arthur Fonseca Côrrea, Lucas Dos Santos Bulhosa, W. Macêdo, M. Galhardo","doi":"10.1109/LAEDC58183.2023.10209107","DOIUrl":"https://doi.org/10.1109/LAEDC58183.2023.10209107","url":null,"abstract":"This paper presents the modelling of a DC nanogrid composed of distributed photovoltaic generation and battery banks. The MATLAB/SIMULINK environment is used to simulate the components. The real DC nanogrid, located outside the laboratory of the Grupo de Estudos e Desenvolvimento de Alternativas Energéticas (GEDAE) at the Universidade Federal do Pará (UFPa) in Belém-Pará, Brazil, provided measured data for model validation. The electronic devices had their operational performance and the power quality at connection points of the storage systems evaluated. During the period with the photovoltaic generation, it was verified that during the real operation of the system, there were moments of overvoltage at the terminals of the battery banks and along the DC distribution nanogrid, this was also identified in the simulated case. The simulation results showed good agreement with the measurements, indicating the applicability of the model.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114018321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling High Frequency Response of Nanometer SOI Devices Using Monte Carlo Transient Technique 用蒙特卡罗暂态技术模拟纳米SOI器件的高频响应
2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209138
J. M´endez-V, Ieee D. Vasileska Fellow, Ieee E. A. Guti´errez Fellow Member, Ieee K. Raleva Senior Member
{"title":"Modeling High Frequency Response of Nanometer SOI Devices Using Monte Carlo Transient Technique","authors":"J. M´endez-V, Ieee D. Vasileska Fellow, Ieee E. A. Guti´errez Fellow Member, Ieee K. Raleva Senior Member","doi":"10.1109/LAEDC58183.2023.10209138","DOIUrl":"https://doi.org/10.1109/LAEDC58183.2023.10209138","url":null,"abstract":"The SOI technologies present several intrinsic advantages for analog and RF applications. Indeed, these technologies allow the reduction of the power consumption at a given operating frequency. Because of these properties, nanometer SOI devices are considered as one of the best options for the implementation of 5G communication technology. Hence, characterization of the high frequency performance of nanometer MOSFETs is needed. Ensemble Monte Carlo device simulator is implemented for this purpose to characterize the high frequency performance of 45 nm nanometer technology node partially-depleted SOI devices. Simulation results for the Y- and S-parameters agree with experimental data, which validates our theoretical model, and suggests that our simulator is able to predict high-frequency operation of a variety of SOI devices from different technology nodes.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132601431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of the compliance current in the electroforming process of HfO2-based ReRAM devices 顺应电流对hfo2基ReRAM器件电铸过程的影响
2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209142
S. Guitarra, L. Trojman, L. Raymond
{"title":"Effects of the compliance current in the electroforming process of HfO2-based ReRAM devices","authors":"S. Guitarra, L. Trojman, L. Raymond","doi":"10.1109/LAEDC58183.2023.10209142","DOIUrl":"https://doi.org/10.1109/LAEDC58183.2023.10209142","url":null,"abstract":"Electroforming is the activation process of ReRAM devices that initiates the resistive switching response by creating filamentary conduction paths in the oxide film. This step is fundamental for the proper operation of the device, and it is controlled by a compliance current (Ic) that prevents the hard dielectric breakdown of the ReRAMs. In this work, we study the influence of this current during the electroforming process and operation in HfO2-based ReRAM devices of different areas. Some parameters from the IV curve were extracted and analyzed to understand how the process could affect the device’s performance. We found a maximum value of Ic needed to form the CF independent of the area device that does not provoke significant changes in the electrical behavior.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114969307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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