TCAD Investigation of Step-Oxide and Asymmetric Doping Design with Electrode Engineering on Lateral β-Ga2O3 MOSFET for Terahertz Applications

This work presents exhaustive TCAD investigation of Step-Oxide- Dual Material Gate with Asymmetric Doping engineering on lateral $\beta-Ga_{2}O_{3}$ MOSFET. The objective of this work is to achieve high frequency performance. Several device attributes such as output and transfer characteristics, transconductance, parasitic capacitances and cut-off frequency etc., have been studied. Further, various critical figure of merits such as transconductance frequency product, gain bandwidth product etc., have also been obtained. A comparison of the proposed device is drawn with the conventional device. The results highlight that the proposed device is a promising design strategy for RF applications.