Implementation of Step-Hetero-Oxide & Dual Material Gate Designs on Lateral β-Ga2O3 MOSFET for Terahertz Applications

Abstract

The work presents extensive simulations to study the impact of Step-Hetero-Oxide and Dual Material Gate designs on lateral β-Ga2O3 MOSFET. Various device attributes of the proposed device are examined and compared with those obtained for conventional device. Furthermore, key metrics such as cut-off frequency, transconductance gain product and gain bandwidth product etc., that are critical for assessing high frequency performance of the device are also evaluated. It is noteworthy to mention that the proposed device demonstrates drastic improvement in high frequency metrics and it is apparent that the proposed device is a promising design for high frequency switching applications.