2023 IEEE Latin American Electron Devices Conference (LAEDC)最新文献_第2页

Long-Term Potentiation and Depression with Vertically Stacked Nanosheet FET 垂直堆叠纳米片场效应管的长期增强和抑制

2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209120

Nupur Navlakha, Md. Hasan Raza Ansari

引用次数: 0

Multi-level Operation in Ultra-scaled MRAM 超大规模MRAM的多级运行

2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209117

V. Sverdlov, M. Bendra, W. Goes, S. Fiorentini, A. García-Barrientos, S. Selberherr

{"title":"Multi-level Operation in Ultra-scaled MRAM","authors":"V. Sverdlov, M. Bendra, W. Goes, S. Fiorentini, A. García-Barrientos, S. Selberherr","doi":"10.1109/LAEDC58183.2023.10209117","DOIUrl":"https://doi.org/10.1109/LAEDC58183.2023.10209117","url":null,"abstract":"Magnetoresistive random access memory (MRAM) prototypes demonstrate fast operation and are suitable for the last level caches. MRAM possesses high endurance, long retention, and requires less masks for fabrication than its competitor flash memory. MRAM is nonvolatile and scalable. Strong perpendicular magnetic anisotropy in most advanced single-digit nanoscale footprint devices is enhanced by elongating the magnetic layers. To facilitate the switching and to increase the interface-induced magnetic anisotropy even further, the free magnetic layers are made of several elongated pieces separated by tunnel barriers with multiple interfaces. To properly model such devices, accurate evaluation of the spin-transfer torques is required. The interfacial and bulk-torques are not independent, and the use of a spin-charge transport approach coupled to the magnetization dynamics allowing to treat the torques on equal footing in magnetic tunnel junctions with elongated layers becomes mandatory. By employing this advanced modeling approach a multi-level memory operation in an ultra-scaled MRAM cell with a composite free layer is demonstrated.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121528670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Device parameters estimation of GFETs at temperatures below 300 K 温度低于300k时gfet器件参数的估计

2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209110

Leslie M. Valdez-Sandoval, E. Ramírez-García, N. Mavredakis, D. Jiménez, A. Pacheco-Sánchez

{"title":"Device parameters estimation of GFETs at temperatures below 300 K","authors":"Leslie M. Valdez-Sandoval, E. Ramírez-García, N. Mavredakis, D. Jiménez, A. Pacheco-Sánchez","doi":"10.1109/LAEDC58183.2023.10209110","DOIUrl":"https://doi.org/10.1109/LAEDC58183.2023.10209110","url":null,"abstract":"Low-temperature performance of four different graphene field-effect transistor (GFET) technologies previously reported in the literature is studied here by means of device transport parameters such as the intrinsic and extrinsic mobility degradation coefficients and the contact resistance. Model-based extraction methodologies are used for obtaining the parameter values. A mobility degradation-based transport model describes accurately the experimental ambipolar I-V data of devices with different gate lengths and at temperatures below 300 K with the extracted parameters. The temperature dependence of both the low-field and effective mobility, calculated based on the validated parameters, enables to obtain an insight on relevant scattering mechanisms at different device conditions, e.g., temperature and bias. From the extracted data it is suggested that, below a certain threshold temperature, the extrinsic mobility degradation improves, i.e., the gate control over the channel, for devices with low scattering mechanisms at room temperature than the ones with significant values of mobility degradation at 300 K.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125086558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermal Evaluation of 28-nm p-type FD-SOI MOSFETs 28nm p型FD-SOI mosfet的热评价

2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209116

A. Rossetto, Caroline S. Soares, G. Wirth, M. Pavanello, Ziyi Wang, D. Vasileska

引用次数: 0

Development of a Biosensor for the Detection of Glucose Levels in Saliva Based on the Oxidation and Detection of Hydrogen Peroxide 基于过氧化氢氧化和检测唾液中葡萄糖水平的生物传感器的研制

2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209133

Fernando Sánchez-Hernández, E. Martínez-Guerrero, E. Araujo-Palomo, Cuauhtémoc R. Aguilera-Galicia, J. Chávez-Hurtado, P. G. López-Cárdenas, Jaime Ramírez-Angulo

引用次数: 0

Perylenediimide-based Acceptors for OPV Applications OPV应用中基于苝酰亚胺的受体

2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209118

M. Ramírez-Como, Desiré Molina, M. Estrada, L. Reséndiz, J. Pallarès, Á. Sastre‐Santos, L. Marsal

引用次数: 0

Precession motion of a CanSat Rover-Back prototype during its fall-to-earth descent 坎萨特漫游者- back原型机在落地过程中的岁差运动

2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209111

Luis Aiquipa Moreno, Roxana Pastrana Alta, Walter Estrada Lopez

引用次数: 0

Increasing the doping efficiency by post-deposition annealing in a-SiGe: H films synthesized by PECVD PECVD制备的a-SiGe: H薄膜沉积后退火提高掺杂效率

2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209126

Ernesto Franco, A. Torres, M. Moreno

引用次数: 0

“Accelerating Engineering Education and Workforce Development in Automation & Control for the Semiconductor Industry Based on Cognitive Neuroscience” “基于认知神经科学的半导体工业自动化控制工程教育与劳动力发展”

2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209137

L. Cruz, Luis Miguel Quevedo, Wilfrido Alejandro, Moreno

{"title":"“Accelerating Engineering Education and Workforce Development in Automation & Control for the Semiconductor Industry Based on Cognitive Neuroscience”","authors":"L. Cruz, Luis Miguel Quevedo, Wilfrido Alejandro, Moreno","doi":"10.1109/LAEDC58183.2023.10209137","DOIUrl":"https://doi.org/10.1109/LAEDC58183.2023.10209137","url":null,"abstract":"The rapid development of the semiconductor industry represents a global challenge to meet the needs of Science, Technology, and Innovation in the 21st century. Advancements in semiconductors optimize computer technology with innovations, among others, in nanotechnology, quantum technology, cognitive computing, Cyber-Physical Human Systems, Artificial Intelligence, and Robotics. The rapid development of semiconductors demands an imperative acceleration of training and the development of a highly skilled workforce. There is a gap between the knowledge and skills of students in the current education system and the fast development of new knowledge. To accelerate comprehensive training in the semiconductor workforce we must start at an early stage, this paper proposes that STEM education must be pedagogically grounded in the advances of cognitive neuroscience and learning. By understanding how the brain functions and how it learns, the process can be enhanced, the education of an Integral Engineer needs to be addressed by forming professionals equipped with adaptability, complex problem-solving, assertive communication, emotional intelligence, interdisciplinary teamwork skills, systems, analytical and critical thinking.This paper proposes curricular transformation processes, ethical formation, pedagogical foundations of interdisciplinary research laboratories, enhanced by an international network of remote laboratories, and a TRUE system of cultural transformation.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126764896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimization of the electrical conductivity and thermal coefficient of temperature (TCR) on hydrogenated amorphous silicon-germanium films doped with nitrogen (a-SiGe:H,N) for applications on high performance infrared detectors 优化掺氮(a-SiGe:H,N)氢化非晶硅锗薄膜的电导率和温度热系数(TCR)，用于高性能红外探测器

2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209128

Oscar Velandia, M. Moreno, Ricardo Zavala, A. Morales, A. Torres, Luis Hernández

{"title":"Optimization of the electrical conductivity and thermal coefficient of temperature (TCR) on hydrogenated amorphous silicon-germanium films doped with nitrogen (a-SiGe:H,N) for applications on high performance infrared detectors","authors":"Oscar Velandia, M. Moreno, Ricardo Zavala, A. Morales, A. Torres, Luis Hernández","doi":"10.1109/LAEDC58183.2023.10209128","DOIUrl":"https://doi.org/10.1109/LAEDC58183.2023.10209128","url":null,"abstract":"Uncooled microbolometers are infrared detectors used for imaging applications in the long-wave IR spectra, made of semiconductor materials, such as vanadium oxide (VOx), boron doped amorphous silicon (a-Si:H,B) or amorphous silicon germanium (a-SiGe:H), the last two are usually deposited by plasma-enhanced chemical vapor deposition (PECVD). When infrared radiation falls on the thermos-sensor films, they experience changes in their electrical resistance, generating an electrical signal proportional to the amount of incident radiation. In this work, we optimized the absorption of infrared radiation in the long-wave IR range (8-14 um) with amorphous silicon germanium films doped with nitrogen (a-SiGe:H,N). Several flow rates of nitrogen N2) and different $mathrm{S}mathrm{i}mathrm{H}_{4}$ and $mathrm{G}mathrm{e}mathrm{H}_{4}$ flow rate ratios have been used for the deposition of two a-SiGe:H,N film series. We have characterized the films electrical and optically, and we have studied the electrical conductivity at room temperature $(sigma_{RT})$, which is in the range of (1.2E-8 to 6.45E-2) $(Omega.mathrm{c}mathrm{m})^{-1}$ and the Temperature Coefficient of Resistance (TCR), which is in the range (2.67 to 6.23) (%/K). Those $sigma_{RT}$ and TCR values of the a-SiGe:H,N films are very attractive for being used in high performance infrared detectors.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131589317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0