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2023 IEEE Latin American Electron Devices Conference (LAEDC)最新文献

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4x1 Patch Antenna Array Using Taper-Based Coupling for 24 GHz Radar Applications 采用基于锥形耦合的4x1贴片天线阵列用于24 GHz雷达应用
2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209124
Arlen Gonzalez-Azuara, G. Méndez-Jerónimo, H. Lobato-Morales, Germán A. Álvarez-Botero
{"title":"4x1 Patch Antenna Array Using Taper-Based Coupling for 24 GHz Radar Applications","authors":"Arlen Gonzalez-Azuara, G. Méndez-Jerónimo, H. Lobato-Morales, Germán A. Álvarez-Botero","doi":"10.1109/LAEDC58183.2023.10209124","DOIUrl":"https://doi.org/10.1109/LAEDC58183.2023.10209124","url":null,"abstract":"Nowadays, microstrip patch antenna arrays are an important part of radar applications. In fact, due to their advantages such as small size, simple and economical fabrication, these structures are used as transmitters and receivers in radars operating at 24 GHz. At these frequencies, there are several considerations that designers must take into account, one of which is the appropriate antenna coupling feed. In this work, a 4x1 patch antenna array using conventional stepped impedance transitions is designed and compared to the proposed array using taper-based impedance transitions. Full-wave simulation data show how the proposal allows for a better coupling between the patch antennas and the feeding microstrip line. In fact, a reflection coefficient value of -43.60 dB was observed, compared to -18.55 dB and -22.23 dB for the single patch and stepped array designs, respectively. The above points highlight the simplicity and convenience of taper-based transitions at microwave operating frequencies.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127945880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improving the performance of photovoltaic laser power converters using automatic global optimization techniques 利用自动全局优化技术提高光伏激光功率变换器的性能
2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209132
Javier F. Lozano, N. Seoane, E. Comesaña, F. Almonacid, E. Fernández, A. García-Loureiro
{"title":"Improving the performance of photovoltaic laser power converters using automatic global optimization techniques","authors":"Javier F. Lozano, N. Seoane, E. Comesaña, F. Almonacid, E. Fernández, A. García-Loureiro","doi":"10.1109/LAEDC58183.2023.10209132","DOIUrl":"https://doi.org/10.1109/LAEDC58183.2023.10209132","url":null,"abstract":"To develop the potential of the High Power Laser Transmission technology, the efficiencies of the Laser Power Converters (LPCs) need to improve. New optimization methods are required to find the optimal configurations of a new generation of ultra-efficient LPCs. In this work we explore the suitability of the SHGO algorithm, a recently published blackbox, global optimization algorithm, to optimize the TCAD modeling of a state-of-the-art GaAs-based Laser Power Converter. We found various configurations that improve the efficiency by a 7.3% of the original device structure in computational times under 17h.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132552179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Fast Transient Full Class AB LDO Regulator 一种快速瞬态全类AB LDO稳压器
2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10208284
A. Serrano-Reyes, M. Sanz-Pascual, B. Calvo-López
{"title":"A Fast Transient Full Class AB LDO Regulator","authors":"A. Serrano-Reyes, M. Sanz-Pascual, B. Calvo-López","doi":"10.1109/LAEDC58183.2023.10208284","DOIUrl":"https://doi.org/10.1109/LAEDC58183.2023.10208284","url":null,"abstract":"A novel fully integrated Low Dropout Regulator (LDO) using a class AB error amplifier, class AB indirect compensation and a QFG-based dynamic transient enhancement circuit is presented in this paper. The LDO was designed in a 180nm CMOS process with a 2.1-3V input supply and 1. 8V regulated output voltage. Post-layout simulations show a line regulation of 3mVN and a load regulation of 77$mu$V/mA. For large load transients from 0 to 50mA, the overshoot and undershoot values are less than 330mV and 211mV, with a recovery time of 2$mu$s while the quiescent current is below 14$mu$A, overall achieving competitive state-of-art performance.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"203 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131680205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A general toolkit for advanced semiconductor transistors: from simulation to machine learning 先进半导体晶体管的通用工具包:从模拟到机器学习
2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209112
A. García-Loureiro, N. Seoane, Julian G. Fernandez, E. Comesaña
{"title":"A general toolkit for advanced semiconductor transistors: from simulation to machine learning","authors":"A. García-Loureiro, N. Seoane, Julian G. Fernandez, E. Comesaña","doi":"10.1109/LAEDC58183.2023.10209112","DOIUrl":"https://doi.org/10.1109/LAEDC58183.2023.10209112","url":null,"abstract":"This work presents an overview of a set of inhouse-built software intended for state-of-the-art semiconductor device modelling, ranging from simulators to post-processing tools and prediction codes based on statistics and machine learning techniques. First, VENDES is a 3D finite-element based quantum-corrected semi-classical/classical toolbox able to characterise the performance, scalability, and variability of transistors. MLFoMPy is a Python-based tool that post-processes IV characteristics, extracting the most relevant figures of merit and preparing the data for subsequent statistical or machine learning studies. FSM is a variability prediction tool that also pinpoints the most sensitive regions of a device to the source of fluctuation. Finally, we also describe machine learning-based prediction tools that were used to obtain full IV curves and specific figures of merit of devices suffering the influence of several sources of variability.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123109022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication and electrical characterization of Al-based MIM capacitors 铝基 MIM 电容器的制造和电气特性分析
2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209141
D. Rocha-Aguilera, J. Molina-Reyes
{"title":"Fabrication and electrical characterization of Al-based MIM capacitors","authors":"D. Rocha-Aguilera, J. Molina-Reyes","doi":"10.1109/LAEDC58183.2023.10209141","DOIUrl":"https://doi.org/10.1109/LAEDC58183.2023.10209141","url":null,"abstract":"In this work, a fabrication process for Al-based metal-insulator-metal capacitors using atomic layer deposition to deposit thin aluminum oxide films with various thicknesses is presented. These devices are used to electrically characterize the thin dielectric films in a structure which is very similar to a Josephson tunneling junction, which is the central element of superconducting qubits. An analysis of the conduction mechanisms through the dielectric and obtention of electrical properties of the materials are also included.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"43 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139363815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of a turbine spirometer prototype and signal digitalization 涡轮肺活量计样机研制及信号数字化
2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209125
Heyul Chavez, Carlos Herrera, Felix Llanos Tejada, Jorge Bazán Mayra, Javier M. Moguerza, C. Raymundo
{"title":"Development of a turbine spirometer prototype and signal digitalization","authors":"Heyul Chavez, Carlos Herrera, Felix Llanos Tejada, Jorge Bazán Mayra, Javier M. Moguerza, C. Raymundo","doi":"10.1109/LAEDC58183.2023.10209125","DOIUrl":"https://doi.org/10.1109/LAEDC58183.2023.10209125","url":null,"abstract":"The present research is part of the project called PHUKUY, which is a low-cost portable digital spirometer prototype designed for remote monitoring of patients with COPD and COVID-19. It also includes additional sensors for improved patient monitoring. This article presents the development of the spirometry module. A turbine spirometer was chosen for its small and lightweight size, easy cleaning and maintenance, and low-cost implementation, which allows for portability. The airflow was successfully digitized, and its direction was detected using a microcontroller, a pair of IR receivers and emitters. This information was then sent via Bluetooth to be displayed in real-time on a mobile phone. For a 3-liter calibration, a maximum error of ±0.115 liters and a standard deviation of 0.051 were achieved.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131370347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A New Microstrip Directional Filter Configuration Composed by Hybrid-Mode Resonators 一种由混合模谐振器组成的新型微带定向滤波器结构
2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209108
H. Lobato-Morales, G. Méndez-Jerónimo, Germán Álvarez-Botero
{"title":"A New Microstrip Directional Filter Configuration Composed by Hybrid-Mode Resonators","authors":"H. Lobato-Morales, G. Méndez-Jerónimo, Germán Álvarez-Botero","doi":"10.1109/LAEDC58183.2023.10209108","DOIUrl":"https://doi.org/10.1109/LAEDC58183.2023.10209108","url":null,"abstract":"The design, fabrication and experimental test of a microstrip two-pole directional filter based on a new approach consisting of hybrid-mode resonators is presented in this paper. The use of hybrid even-mode and odd-mode resonators allows the structure to be composed by two stages having bandstop filter behavior, and following a symmetrical configuration, which in turn makes it easier to design and adjust while keeping low dimensions. The proposed filter is designed to operate over the uplink channel of the 1.8 GHz band used for mobile communications with a 4 % bandwidth.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116722007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication and characterization of Al-based integrated MIS capacitors 铝基集成MIS电容器的制备与表征
2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209130
Daniel Rocha-Aguilera, Daniel Ferrusca-Rodríguez, J. Molina-Reyes
{"title":"Fabrication and characterization of Al-based integrated MIS capacitors","authors":"Daniel Rocha-Aguilera, Daniel Ferrusca-Rodríguez, J. Molina-Reyes","doi":"10.1109/LAEDC58183.2023.10209130","DOIUrl":"https://doi.org/10.1109/LAEDC58183.2023.10209130","url":null,"abstract":"In this work, the fabrication and characterization of $Al/Al_{2}O_{3}/Si$ capacitors which uses atomic layer deposition to deposit ultra-thin $Al_{2}O_{3}$ films is presented. Results of materials’ characterization of the capacitors are included, as well as electrical characterization at room and cryogenic temperatures, a brief analysis of conduction mechanisms through the dielectric and the obtention of electrical properties of the materials.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"505 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126856338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Empirical DC compact model for source-gated transistors using TCAD simulation data 基于TCAD仿真数据的源门控晶体管经验直流紧凑模型
2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209131
Patryk Golec, R. Sporea, E. Bestelink, B. Iñíguez
{"title":"Empirical DC compact model for source-gated transistors using TCAD simulation data","authors":"Patryk Golec, R. Sporea, E. Bestelink, B. Iñíguez","doi":"10.1109/LAEDC58183.2023.10209131","DOIUrl":"https://doi.org/10.1109/LAEDC58183.2023.10209131","url":null,"abstract":"A source-gated transistor (SGT) is a type of thin film transistor (TFT) with unique behaviors. Functionally, the SGT is designed to decrease the saturation voltage at a lower and often more stable saturation current in comparison to a standard TFT, which makes it preferable in some circuit applications. This is achieved by introducing additional effects especially around the source region which differentiate the SGT enough that it cannot be described by a standard TFT compact model. The work presented aims to create the first empirical SGT compact model which may be implemented in DC circuits. This compact model has been developed using the data obtained from an SGT TCAD model.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126687956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental Characterization of a Thermoelectric Generator System 热电发电机系统的实验表征
2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI: 10.1109/LAEDC58183.2023.10209119
D. Sanín-Villa, E. Henao-Bravo, J. Villegas-Ceballos, F. Chejne
{"title":"Experimental Characterization of a Thermoelectric Generator System","authors":"D. Sanín-Villa, E. Henao-Bravo, J. Villegas-Ceballos, F. Chejne","doi":"10.1109/LAEDC58183.2023.10209119","DOIUrl":"https://doi.org/10.1109/LAEDC58183.2023.10209119","url":null,"abstract":"This research paper presents a detailed investigation of the performance of a thermoelectric generator (TEG) system. The TEG system is composed of multiple thermoelectric legs connected in series, a heat source, and an electric load. The experimental setup is designed to simulate real-world operating conditions and allow for the measurement of the TEG’s power output as a function of the temperature difference between the hot and cold sides, and the load conditions. The performance evaluation of the TEG system is conducted using a commercial thermoelectric generator module (TEM) and several measurement instruments such as power analyzers, thermocouples, and electronic devices. The results of the study are used to plot the TEG’s operating curves, which show the power output as a function of the temperature difference and the TEM current including the identification of the maximum power point (MPP). The operating curves allow for the evaluation of the TEG’s behavior and thermal characteristics under different conditions. Additionally, this result provides valuable insights into the performance of TEGs and contribute to the advancement of this technology.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"13 33","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113963002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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