Fabrication and characterization of Al-based integrated MIS capacitors

Abstract

In this work, the fabrication and characterization of $Al/Al_{2}O_{3}/Si$ capacitors which uses atomic layer deposition to deposit ultra-thin $Al_{2}O_{3}$ films is presented. Results of materials’ characterization of the capacitors are included, as well as electrical characterization at room and cryogenic temperatures, a brief analysis of conduction mechanisms through the dielectric and the obtention of electrical properties of the materials.