Fabrication and electrical characterization of Al-based MIM capacitors

Abstract

In this work, a fabrication process for Al-based metal-insulator-metal capacitors using atomic layer deposition to deposit thin aluminum oxide films with various thicknesses is presented. These devices are used to electrically characterize the thin dielectric films in a structure which is very similar to a Josephson tunneling junction, which is the central element of superconducting qubits. An analysis of the conduction mechanisms through the dielectric and obtention of electrical properties of the materials are also included.