{"title":"一种快速瞬态全类AB LDO稳压器","authors":"A. Serrano-Reyes, M. Sanz-Pascual, B. Calvo-López","doi":"10.1109/LAEDC58183.2023.10208284","DOIUrl":null,"url":null,"abstract":"A novel fully integrated Low Dropout Regulator (LDO) using a class AB error amplifier, class AB indirect compensation and a QFG-based dynamic transient enhancement circuit is presented in this paper. The LDO was designed in a 180nm CMOS process with a 2.1-3V input supply and 1. 8V regulated output voltage. Post-layout simulations show a line regulation of 3mVN and a load regulation of 77$\\mu$V/mA. For large load transients from 0 to 50mA, the overshoot and undershoot values are less than 330mV and 211mV, with a recovery time of 2$\\mu$s while the quiescent current is below 14$\\mu$A, overall achieving competitive state-of-art performance.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"203 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Fast Transient Full Class AB LDO Regulator\",\"authors\":\"A. Serrano-Reyes, M. Sanz-Pascual, B. Calvo-López\",\"doi\":\"10.1109/LAEDC58183.2023.10208284\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel fully integrated Low Dropout Regulator (LDO) using a class AB error amplifier, class AB indirect compensation and a QFG-based dynamic transient enhancement circuit is presented in this paper. The LDO was designed in a 180nm CMOS process with a 2.1-3V input supply and 1. 8V regulated output voltage. Post-layout simulations show a line regulation of 3mVN and a load regulation of 77$\\\\mu$V/mA. For large load transients from 0 to 50mA, the overshoot and undershoot values are less than 330mV and 211mV, with a recovery time of 2$\\\\mu$s while the quiescent current is below 14$\\\\mu$A, overall achieving competitive state-of-art performance.\",\"PeriodicalId\":151042,\"journal\":{\"name\":\"2023 IEEE Latin American Electron Devices Conference (LAEDC)\",\"volume\":\"203 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-07-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE Latin American Electron Devices Conference (LAEDC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LAEDC58183.2023.10208284\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LAEDC58183.2023.10208284","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel fully integrated Low Dropout Regulator (LDO) using a class AB error amplifier, class AB indirect compensation and a QFG-based dynamic transient enhancement circuit is presented in this paper. The LDO was designed in a 180nm CMOS process with a 2.1-3V input supply and 1. 8V regulated output voltage. Post-layout simulations show a line regulation of 3mVN and a load regulation of 77$\mu$V/mA. For large load transients from 0 to 50mA, the overshoot and undershoot values are less than 330mV and 211mV, with a recovery time of 2$\mu$s while the quiescent current is below 14$\mu$A, overall achieving competitive state-of-art performance.
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