铝基集成MIS电容器的制备与表征

2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI:10.1109/LAEDC58183.2023.10209130

Daniel Rocha-Aguilera, Daniel Ferrusca-Rodríguez, J. Molina-Reyes

{"title":"铝基集成MIS电容器的制备与表征","authors":"Daniel Rocha-Aguilera, Daniel Ferrusca-Rodríguez, J. Molina-Reyes","doi":"10.1109/LAEDC58183.2023.10209130","DOIUrl":null,"url":null,"abstract":"In this work, the fabrication and characterization of $Al/Al_{2}O_{3}/Si$ capacitors which uses atomic layer deposition to deposit ultra-thin $Al_{2}O_{3}$ films is presented. Results of materials’ characterization of the capacitors are included, as well as electrical characterization at room and cryogenic temperatures, a brief analysis of conduction mechanisms through the dielectric and the obtention of electrical properties of the materials.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"505 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fabrication and characterization of Al-based integrated MIS capacitors\",\"authors\":\"Daniel Rocha-Aguilera, Daniel Ferrusca-Rodríguez, J. Molina-Reyes\",\"doi\":\"10.1109/LAEDC58183.2023.10209130\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, the fabrication and characterization of $Al/Al_{2}O_{3}/Si$ capacitors which uses atomic layer deposition to deposit ultra-thin $Al_{2}O_{3}$ films is presented. Results of materials’ characterization of the capacitors are included, as well as electrical characterization at room and cryogenic temperatures, a brief analysis of conduction mechanisms through the dielectric and the obtention of electrical properties of the materials.\",\"PeriodicalId\":151042,\"journal\":{\"name\":\"2023 IEEE Latin American Electron Devices Conference (LAEDC)\",\"volume\":\"505 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-07-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE Latin American Electron Devices Conference (LAEDC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LAEDC58183.2023.10209130\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LAEDC58183.2023.10209130","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文介绍了利用原子层沉积技术制备超薄$Al/Al_{2}O_{3}/Si$电容器的制备和表征方法。包括材料表征的结果，以及在室温和低温下的电学表征，通过电介质的传导机制的简要分析和材料的电学性能的注意。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Fabrication and characterization of Al-based integrated MIS capacitors

In this work, the fabrication and characterization of $Al/Al_{2}O_{3}/Si$ capacitors which uses atomic layer deposition to deposit ultra-thin $Al_{2}O_{3}$ films is presented. Results of materials’ characterization of the capacitors are included, as well as electrical characterization at room and cryogenic temperatures, a brief analysis of conduction mechanisms through the dielectric and the obtention of electrical properties of the materials.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2023 IEEE Latin American Electron Devices Conference (LAEDC)

自引率

0.00%

发文量