Thermal Evaluation of 28-nm p-type FD-SOI MOSFETs

Abstract

With the advent of quantum computing, MOSFET operation in cryogenic environments is of particular interest. Moreover, the full understanding of the thermal dynamic under these circumstances is key for proper modeling and design of circuits for low-temperature applications. In this work we present the partial results for the ongoing investigation of self-heating effects in 28-nm p-type FD-SOI devices aiming cryogenic operation. The simulation framework proved to deliver consistent results for room temperature data, and it is being extended to incorporate ultra-low temperature capabilities.