Modeling High Frequency Response of Nanometer SOI Devices Using Monte Carlo Transient Technique

The SOI technologies present several intrinsic advantages for analog and RF applications. Indeed, these technologies allow the reduction of the power consumption at a given operating frequency. Because of these properties, nanometer SOI devices are considered as one of the best options for the implementation of 5G communication technology. Hence, characterization of the high frequency performance of nanometer MOSFETs is needed. Ensemble Monte Carlo device simulator is implemented for this purpose to characterize the high frequency performance of 45 nm nanometer technology node partially-depleted SOI devices. Simulation results for the Y- and S-parameters agree with experimental data, which validates our theoretical model, and suggests that our simulator is able to predict high-frequency operation of a variety of SOI devices from different technology nodes.