High-Performance Germanium P-I-N Photodiodes for High-Speed, Hard X-Ray Imaging

2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI:10.1109/LAEDC58183.2023.10209127

Ziang Guo, Sergei Mistyuk, A. Carpenter, C. Hunt

引用次数: 0

Abstract

A P-I-N hard X-ray photodetector made using epitaxial germanium has been designed, fabricated, and tested. The device is tested from 6keV to 28 keV synchrotron radiation to verify quantum efficiency and the temporal response of epitaxial germanium.

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用于高速硬x射线成像的高性能锗P-I-N光电二极管

采用外延锗材料设计、制作并测试了一种P-I-N硬x射线光电探测器。在6keV到28kev的同步辐射下测试了器件的量子效率和外延锗的时间响应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2023 IEEE Latin American Electron Devices Conference (LAEDC)

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