基于跨导电流比的mosfet从线性到饱和模式阈值电压提取

2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI:10.1109/LAEDC58183.2023.10209129

M. Bucher, N. Makris, Loukas Chevas

{"title":"基于跨导电流比的mosfet从线性到饱和模式阈值电压提取","authors":"M. Bucher, N. Makris, Loukas Chevas","doi":"10.1109/LAEDC58183.2023.10209129","DOIUrl":null,"url":null,"abstract":"The present work describes a technique for extracting MOSFET threshold voltage from linear to saturation modes. Based on the charge-based model, transconductance-to-current ratio provides a direct way to determine threshold voltage analytically. Experimental data from advanced bulk CMOS processes corroborate the advantages of the present technique, such as consistent estimation of drain induced barrier lowering and reverse short-channel effects.","PeriodicalId":151042,"journal":{"name":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Transconductance-to-Current Ratio Based Threshold Voltage Extraction in MOSFETs from Linear to Saturation Modes\",\"authors\":\"M. Bucher, N. Makris, Loukas Chevas\",\"doi\":\"10.1109/LAEDC58183.2023.10209129\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The present work describes a technique for extracting MOSFET threshold voltage from linear to saturation modes. Based on the charge-based model, transconductance-to-current ratio provides a direct way to determine threshold voltage analytically. Experimental data from advanced bulk CMOS processes corroborate the advantages of the present technique, such as consistent estimation of drain induced barrier lowering and reverse short-channel effects.\",\"PeriodicalId\":151042,\"journal\":{\"name\":\"2023 IEEE Latin American Electron Devices Conference (LAEDC)\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-07-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE Latin American Electron Devices Conference (LAEDC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LAEDC58183.2023.10209129\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE Latin American Electron Devices Conference (LAEDC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LAEDC58183.2023.10209129","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本工作描述了一种从线性到饱和模式提取MOSFET阈值电压的技术。基于基于电荷的模型，跨导电流比为解析确定阈值电压提供了一种直接的方法。先进体CMOS工艺的实验数据证实了该技术的优势，如对漏极引起的势垒降低和反向短通道效应的一致估计。

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Transconductance-to-Current Ratio Based Threshold Voltage Extraction in MOSFETs from Linear to Saturation Modes

The present work describes a technique for extracting MOSFET threshold voltage from linear to saturation modes. Based on the charge-based model, transconductance-to-current ratio provides a direct way to determine threshold voltage analytically. Experimental data from advanced bulk CMOS processes corroborate the advantages of the present technique, such as consistent estimation of drain induced barrier lowering and reverse short-channel effects.

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2023 IEEE Latin American Electron Devices Conference (LAEDC)

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