Ziyi Wang, D. Vasileska, Caroline S. Soares, G. Wirth, Jairo Mendez Villanueva, M. Pavanello, M. Povolotskyi
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Recently, excellent characteristics were reported for Fully-Depleted (FD) SOI devices operated under cryogenic temperatures. It was also observed that self-heating effects (SHE) play a crucial role to the FD SOI device operation. The goal of this work is to examine the role of the self-heating effects in 28 nm technology node FD SOI devices operated down to 78K and compare our simulation results with available experimental data. Simulation results confirm experimental findings that the temperature increase in the active channel region of the device is more significant at low temperatures.
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