热退火温度对富硅氧化物双层结构发光性能和形态性能的影响。

2023 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2023-07-03 DOI:10.1109/LAEDC58183.2023.10209139

J. juan, Avilés Bravo, J. Federico, Ramirez Rios, A. Sánchez, M. Moreno, L. P. Huerta

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引用次数: 1

摘要

本文研究了SR$\ mathm {O}_{\ mathm {x}}$/SR$\ mathm {O}_{\ mathm {y}}$双分子层结构在SR$\ mathm {O}_{\ mathm {y}}$中含有高硅过量时，热退火温度对其光学和形态学性质的影响。采用低压化学气相沉积法沉积SR$\ mathm {O}_{\ mathm {x}}$/SR$\ mathm {O}_{\ mathm {y}}$双分子层结构，然后在900 ~ 1100℃范围内进行热退火。此外，还沉积了$\mathrm{S}\mathrm{R}\mathrm{O}_{\mathrm{x}}$和SR$\mathrm{O}_{\mathrm{y}}$单层进行比较。随着退火温度的升高，SR$\ mathm {O}_{\ mathm {x}}$/SR$\ mathm {O}_{\ mathm {y}}$双层结构的变化导致折射率和平均粗糙度降低。当退火温度从1100℃降低到1050℃时，光致发光强度(65 ~ 136 a.u/nm)提高了两倍。分析了发光强度与表面形貌的关系。

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Effect of the thermal annealing temperature on the luminescent and morphological properties of silicon rich oxide bilayer structures.

This work studies the effect of the thermal annealing temperature on the optical and morphological properties of SR$\mathrm{O}_{\mathrm{x}}$/SR$\mathrm{O}_{\mathrm{y}}$ bilayer structures when the SR$\mathrm{O}_{\mathrm{y}}$ contains a high silicon excess. SR$\mathrm{O}_{\mathrm{x}}$/SR$\mathrm{O}_{\mathrm{y}}$ bilayer structures were deposited by low pressure chemical vapor deposition and then thermally annealed at temperatures ranging from 900-1100 0C. In addition, $\mathrm{S}\mathrm{R}\mathrm{O}_{\mathrm{x}}$ and SR$\mathrm{O}_{\mathrm{y}}$ monolayers were deposited for comparison. The refraction index and the average roughness decrease when the thermal annealing temperature increases as a result of structural changes within the SR$\mathrm{O}_{\mathrm{x}}$/SR$\mathrm{O}_{\mathrm{y}}$ bilayers. A two-fold improvement in the photoluminescence (PL) intensity (65 to 136 a.u/nm) was obtained as the annealing temperature is reduced from 1100 to 1050°c. A relationship between PL emission and surface morphology was analyzed.

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2023 IEEE Latin American Electron Devices Conference (LAEDC)

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