Transconductance-to-Current Ratio Based Threshold Voltage Extraction in MOSFETs from Linear to Saturation Modes

Abstract

The present work describes a technique for extracting MOSFET threshold voltage from linear to saturation modes. Based on the charge-based model, transconductance-to-current ratio provides a direct way to determine threshold voltage analytically. Experimental data from advanced bulk CMOS processes corroborate the advantages of the present technique, such as consistent estimation of drain induced barrier lowering and reverse short-channel effects.