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1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings最新文献

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A CMOS implementation of a Connex memory Connex存储器的CMOS实现
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651328
B. Mitu, M. Ilas
{"title":"A CMOS implementation of a Connex memory","authors":"B. Mitu, M. Ilas","doi":"10.1109/SMICND.1997.651328","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651328","url":null,"abstract":"The Connex Memory was introduced as a physical support for efficient symbolic processing. CM allows a significant speed-up over conventional CAMs in applications such as string matching with don't cares in time related to the size of the string, regardless the size of the CM content. This paper presents a parametrical implementation of an enhanced version of CM at algorithmic-level, as well as gate-level, using VHDL language and Cadence software package. The basic cell is dynamically implemented and the electric analysis is performed in the Mietec 2 /spl mu/m technology. The behavior of all the other blocks is validated by logic simulation using the 'leapfrog' simulator from Cadence. Schemes, programs in VHDL and complexity issues are illustrated and discussed in the paper. In addition, applications of the CM are presented, including support for functional and logical programming, relational databases, DNA computing (splicing operation) and others.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123758235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sulfur passivation for photosensitivity control of detectors with corrugated metal-III-V semiconductor interface 钝化硫以控制波纹状金属-III-V 族半导体界面探测器的光敏度
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651594
N. Dmitruk, O.I. Mayeva, S.V. Mamikin, O. Yastrubchak
{"title":"Sulfur passivation for photosensitivity control of detectors with corrugated metal-III-V semiconductor interface","authors":"N. Dmitruk, O.I. Mayeva, S.V. Mamikin, O. Yastrubchak","doi":"10.1109/SMICND.1997.651594","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651594","url":null,"abstract":"We report on a sulfur based surface passivation method for photosensitivity control of MSM detectors with corrugated interface. Spectral and polarization characteristics of photosensitivity are used to study this treatment effectiveness. The investigation results reveal that the photosensitivity of diodes increases up to a one order of magnitude. Such characteristics were monitored over a period of 3 years and were found to be stable. The spectral sensitivity of prepared photodetectors in the surface plasmon polariton excitation regime after S-treatment is tunable over the visible spectrum by a dielectric coating.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131352143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Lateral bipolar magnetotransistors with enhanced emitter injection modulation and carrier deflection 具有增强发射极注入调制和载流子偏转的横向双极磁晶体管
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651300
M. Avram, O. Neagoe, T. Lipan
{"title":"Lateral bipolar magnetotransistors with enhanced emitter injection modulation and carrier deflection","authors":"M. Avram, O. Neagoe, T. Lipan","doi":"10.1109/SMICND.1997.651300","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651300","url":null,"abstract":"Two types of integrated magnetotransistors based on enhanced modulation of emitter injection and carrier deflection are presented. The absolute magnetosensitivity of the devices is about 1 to 5 mV/mT. The relative magnetosensitivity is in the range 1-5 T/sup -1/ at collector currents of the order of 0.5 mA. Between the magnetic field and the output signal exists a linear dependence for certain biasing conditions.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131946689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Anomalous current injection phenomena at the emitter-base junction of InP/InGaAs HBTs InP/InGaAs HBTs发射基结处的异常电流注入现象
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651602
D. Sachelarie, M. Sachelarie
{"title":"Anomalous current injection phenomena at the emitter-base junction of InP/InGaAs HBTs","authors":"D. Sachelarie, M. Sachelarie","doi":"10.1109/SMICND.1997.651602","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651602","url":null,"abstract":"An analysis of the injection phenomena in the InP/InGaAs heterojunction bipolar transistors passivated with Si/sub 3/N/sub 4/ has been made. Two different mechanisms are shown to be responsible for the anomalous carrier injection at the emitter-base heterojunction in the low voltage range. One is based on the thermionic emission in an accumulation region along the emitter edges and the other based on the preferential electron tunnelling, also in a thin region along the emitter edges.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128882845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
3-D modelling for waveguide to opto-FET leaky-wave coupling in silicon microsystems 硅微系统中波导与光场效应管漏波耦合的三维建模
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651310
D. Cristea
{"title":"3-D modelling for waveguide to opto-FET leaky-wave coupling in silicon microsystems","authors":"D. Cristea","doi":"10.1109/SMICND.1997.651310","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651310","url":null,"abstract":"The paper presents a model for leaky-wave coupling of a waveguide to an opto-FET. The opto-FET, due to its high responsivity, is very useful in an integrated microsystem because it can replace both a photodiode and am amplifier. The most interesting conclusion of the model is that, in case of leaky-wave coupling of the opto-FET to a waveguide, the dependence of the photoresponse on incident optical power is practically linear, while in the case of uniform illumination it is logarithmic.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129846058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A thick film semiconductor NO/sub x/ detector 一种厚膜半导体NO/sub /探测器
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651305
G. Ţelipan, E. Bodea, C. Petrescu, M. Motataianu
{"title":"A thick film semiconductor NO/sub x/ detector","authors":"G. Ţelipan, E. Bodea, C. Petrescu, M. Motataianu","doi":"10.1109/SMICND.1997.651305","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651305","url":null,"abstract":"The paper presents a NO/sub x/ detector made by thick film technology. The two plated electrodes using a conductive Pd-Ag ink were deposited on one side of the alumina substrate. A thick-film heater material is pasted on the other side of the substrate the sensitive film, was produced, by a TiO/sub 2/-Al/sub 2/O/sub 3/ resistive ink. The device electrical resistance decrease from 200 K/spl Omega/ in pure air to 36 K/spl Omega/ in a 2000 ppm NO/sub x/ atmosphere for a working temperature of 450/spl deg/C.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"16 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114023525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Anisotropic etching diagrams-another way to look at them 各向异性蚀刻图——另一种看待它们的方式
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651322
N. Moldovan, S. Nedelcu, M. Diculescu
{"title":"Anisotropic etching diagrams-another way to look at them","authors":"N. Moldovan, S. Nedelcu, M. Diculescu","doi":"10.1109/SMICND.1997.651322","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651322","url":null,"abstract":"Starting from a simple model for the step movement, a new interpretation is given to the anisotropic etching angular diagrams. The etching rates along a few main directions, corresponding to some fundamental mechanisms of etching, can explain entirely the complex form of the diagrams. This reduces drastically the number of parameters necessary to describe the diagrams and shows that STM investigations for deducing the mechanisms of etching have to be made only for a limited number of planes.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115022382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The intrinsic pseudo-MOSFET technique 本征伪mosfet技术
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651583
A. Ionescu, D. Munteanu, A. Chovet, A. Rusu, D. Steriu
{"title":"The intrinsic pseudo-MOSFET technique","authors":"A. Ionescu, D. Munteanu, A. Chovet, A. Rusu, D. Steriu","doi":"10.1109/SMICND.1997.651583","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651583","url":null,"abstract":"In situ electrical characterization is extremely important for SOI wafer fabrication because it allows material evaluation prior to any device processing. The aim of this paper is to report on the development of the intrinsic pseudo-MOSFET electrical characterization method (4-point probe method), which significantly improves the precision of the electrical parameter determination for SOI wafers. A thorough comparison between the 2-point and the 4-point methods is also presented.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114446631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Study of the near Si-SiO/sub 2/ interface trap layer using the charge pumping technique 利用电荷泵送技术研究近Si-SiO/sub - 2/界面陷阱层
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651565
Y. Maneglia, D. Bauza
{"title":"Study of the near Si-SiO/sub 2/ interface trap layer using the charge pumping technique","authors":"Y. Maneglia, D. Bauza","doi":"10.1109/SMICND.1997.651565","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651565","url":null,"abstract":"It is shown that the charge pumping technique allows the extraction of the Si-SiO/sub 2/ interface depth trap concentration profile. This profile is found of the form N/sub t/(x)=N/sub ts/ exp(-x/d)+N/sub to/ where d is the distance in the oxide from the interface. The method is discussed as well as the expression of the trap density obtained.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133112543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Design and modelling for a thermal flow sensor 热流量传感器的设计与建模
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651295
D. Popescu, B. Mihalea, P. Lerch, P. Renaud, D. Dascalu
{"title":"Design and modelling for a thermal flow sensor","authors":"D. Popescu, B. Mihalea, P. Lerch, P. Renaud, D. Dascalu","doi":"10.1109/SMICND.1997.651295","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651295","url":null,"abstract":"Design and modelling have been made for a new type of integrated flow sensor for implementation in a CMOS compatible technology. The sensor is designed for both gas and fluid flow sensing in applications with transient velocity and temperature profiles. This appear also in microfluidics where there is a pulsating flow when drive is made with micropumps. The sensor is analysed for fluid flow and heat transfer. Modelling and optimisation of the sensor give results for the necessary geometrical parameters and materials of the sensor for maximising the sensibility in applications with a known fluid and in a given domain of fluid velocities and temperatures.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125968149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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