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1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings最新文献

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Radiation damage effects on X- and gamma-ray N/sup +/NPP/sup +/ silicon detectors X射线和伽马射线N/sup +/NPP/sup +/硅探测器的辐射损伤效应
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651297
V. Cimpoca, M. Petriş, R. Ruscu, R. Moraru, M. Breten, M. Cimpoca
{"title":"Radiation damage effects on X- and gamma-ray N/sup +/NPP/sup +/ silicon detectors","authors":"V. Cimpoca, M. Petriş, R. Ruscu, R. Moraru, M. Breten, M. Cimpoca","doi":"10.1109/SMICND.1997.651297","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651297","url":null,"abstract":"The paper describes some results concerning technology and behaviour of Xand gamma-ray N/sup +/PP/sup +/ silicon detectors used in physics research, industrial and medical radiography, and non-destructive testing. Devices manufactured under this technology proved to be stable after an exposure in high intensity gamma field with the dose range of 10 krad-5 Mrad. Nuclear radiation resistance was studied by irradiation with /sup 60/Co gamma source (1.17, 1.33 MeV) at dose rates of 59 krad/hour and 570 krad/hour.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123943826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
E-Field probe for measuring the exposure occurred by mobile phones in phantoms 用于测量幻影中移动电话所产生的暴露的电磁场探针
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651196
B. Szentpáli, Bo Van Tuyen, G. Thuróczy
{"title":"E-Field probe for measuring the exposure occurred by mobile phones in phantoms","authors":"B. Szentpáli, Bo Van Tuyen, G. Thuróczy","doi":"10.1109/SMICND.1997.651196","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651196","url":null,"abstract":"The explosion-like spread of mobile telecommunication raises the problem of the exposure of the user to the electromagnetic field. The most realistic experimental investigations of the exposure can be made in phantoms. An E-Field probe has been developed for this purpose. The isotropic probe consists of three mutually perpendicular short dipole antennas with zero-bias diodes in the gap and highly resistive wires to the preamplifier. The device can be applied in liquid phantoms. The technical details and first measurements are given.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"209 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122512445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Monte Carlo hardware simulator for electron dynamics in semiconductors. Part II: A parallel approach to the Poisson equation solution 半导体电子动力学的蒙特卡罗硬件模拟器。第二部分:泊松方程解的平行方法
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651601
A. Negoi, S. Bara, J. Zimmermann
{"title":"Monte Carlo hardware simulator for electron dynamics in semiconductors. Part II: A parallel approach to the Poisson equation solution","authors":"A. Negoi, S. Bara, J. Zimmermann","doi":"10.1109/SMICND.1997.651601","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651601","url":null,"abstract":"This paper addresses the need of a high-speed hardware solver for a partial differential equation of the second order, with application to Poisson's equation. The solution presented will be a part of a hardware device simulator using the Monte Carlo method. We present simulation results to demonstrate the advantage of a parallel computing solution using the finite differences method over a classic Gauss-Seidel iteration process.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121098192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Radio astronomy receivers for solar observations 用于太阳观测的射电天文接收机
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651335
V. Buiculescu, C. Buiculescu, A. Oncica
{"title":"Radio astronomy receivers for solar observations","authors":"V. Buiculescu, C. Buiculescu, A. Oncica","doi":"10.1109/SMICND.1997.651335","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651335","url":null,"abstract":"Total power radiometers are discussed from the point of view of radio astronomy applications, pointing out some technical and experimental achievements.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116121489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Epitaxial growth by low pressure chemical vapour deposition of Si/sub 1-x/Ge/sub x//Si and applications Si/sub - 1-x/Ge/sub -x/ Si的低压化学气相沉积外延生长及其应用
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651223
L. Vescan, M. Goryll, K. Grimm, S. Wickenhauser, T. Stoica
{"title":"Epitaxial growth by low pressure chemical vapour deposition of Si/sub 1-x/Ge/sub x//Si and applications","authors":"L. Vescan, M. Goryll, K. Grimm, S. Wickenhauser, T. Stoica","doi":"10.1109/SMICND.1997.651223","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651223","url":null,"abstract":"Low pressure chemical vapour deposition of Si and SiGe was investigated for novel devices for microelectronics and optoelectronics. Results on facet formation, nanostructures by lateral confinement with facets, increase of the critical thickness in finite pads, 2D to 3D growth transition and application to light emitting diodes with room temperature operation will be presented.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"243 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115471540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of the restructuring process on the phosphorus doping near the polysilicon/SiO/sub 2/ interface on silicon 重组过程对硅上多晶硅/SiO/ sub2 /界面附近磷掺杂的影响
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651551
F. Găiseanu, D. Kurger, C. Dimitriadis, J. Stocmenos, C. Postolache, D. Tsoukalas, E. Tsoi, D. Goustouridis
{"title":"Influence of the restructuring process on the phosphorus doping near the polysilicon/SiO/sub 2/ interface on silicon","authors":"F. Găiseanu, D. Kurger, C. Dimitriadis, J. Stocmenos, C. Postolache, D. Tsoukalas, E. Tsoi, D. Goustouridis","doi":"10.1109/SMICND.1997.651551","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651551","url":null,"abstract":"We investigate the influence of structural modifications on the phosphorus doping of thin (0.4 /spl mu/m) LP-CVD polysilicon layers deposited at 620/spl deg/C on SiO/sub 2/ films intentionally grown with a thickness of 4 nm on a (111) oriented, silicon substrate. The measurements by XTEM and SIMS permitted to correlate the structure modifications with the doping properties after the various drive-in diffusion conditions in the temperature range of (900/spl deg/C-1000/spl deg/C) of the polysilicon layers.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126049308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impurity states in a spherical quantum dot: Effect of central cell correction 球形量子点中的杂质态:中心胞校正的影响
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651580
E. Niculescu, A. Niculescu, A. Dafinei
{"title":"Impurity states in a spherical quantum dot: Effect of central cell correction","authors":"E. Niculescu, A. Niculescu, A. Dafinei","doi":"10.1109/SMICND.1997.651580","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651580","url":null,"abstract":"The effect of the central cell correction on the binding energies of shallow donors in a spherical GaAs/Ga/sub 1-x/Al/sub x/As quantum dot is studied. The effective-mass approximation within a variational scheme is adopted and central cell corrections are calculated by using a Coulomb potential modified with an adjustable parameter. For small values of the radius of the dot large corrections are obtained for the shallow donors studied.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128917618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A method for more accurate measurement of diffraction gratings efficiency 一种更精确测量衍射光栅效率的方法
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651312
L. Dragnea, M. Ilie, A. Vitriuc, P. Sindile, O. Iancu
{"title":"A method for more accurate measurement of diffraction gratings efficiency","authors":"L. Dragnea, M. Ilie, A. Vitriuc, P. Sindile, O. Iancu","doi":"10.1109/SMICND.1997.651312","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651312","url":null,"abstract":"A simpler and efficient measuring method for diffraction grating efficiency is presented. To measure the diffraction efficiency an optical system and a photodetector are used. The method consists in simplifying the optical system by replacing the output of the optical system with an aperture, and in calculating the distance between the photodetector and this aperture.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124064301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SnO/sub 2/ sol-gel derived films doped with platinum and antimony 掺杂铂和锑的SnO/ sub2 /溶胶-凝胶衍生膜
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651591
C. Savaniu, A. Arnautu, C. Cobianu, M. Zaharescu, C. Parlog, A. van den Berg
{"title":"SnO/sub 2/ sol-gel derived films doped with platinum and antimony","authors":"C. Savaniu, A. Arnautu, C. Cobianu, M. Zaharescu, C. Parlog, A. van den Berg","doi":"10.1109/SMICND.1997.651591","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651591","url":null,"abstract":"SnO/sub 2/ sol-gel derived thin films doped simultaneously with platinum and antimony are obtained and reported for the first time. Transparent, crack-free layers, deposited on silicon or porous silicon (PS) substrates were obtained with antimony doping in the range (0-2)% M, while the platinum addition was limited to maximum 1% M.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128595869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Micromechanics in indium phosphide for opto electrical applications 光电应用磷化铟的微观力学
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651240
K. Hjort
{"title":"Micromechanics in indium phosphide for opto electrical applications","authors":"K. Hjort","doi":"10.1109/SMICND.1997.651240","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651240","url":null,"abstract":"Indium phosphide based micro opto electro mechanics (MOEMs) hold promises of micromechanical applications in the longer wavelength region, and in particular for applications in telecommunication networks. Recent work on indium phosphide micromechanics is presented: the mechanics, the micromachining and fabrication, and possible future devices and applications.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128419131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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