F. Găiseanu, D. Kurger, C. Dimitriadis, J. Stocmenos, C. Postolache, D. Tsoukalas, E. Tsoi, D. Goustouridis
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Influence of the restructuring process on the phosphorus doping near the polysilicon/SiO/sub 2/ interface on silicon
We investigate the influence of structural modifications on the phosphorus doping of thin (0.4 /spl mu/m) LP-CVD polysilicon layers deposited at 620/spl deg/C on SiO/sub 2/ films intentionally grown with a thickness of 4 nm on a (111) oriented, silicon substrate. The measurements by XTEM and SIMS permitted to correlate the structure modifications with the doping properties after the various drive-in diffusion conditions in the temperature range of (900/spl deg/C-1000/spl deg/C) of the polysilicon layers.
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