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1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings最新文献

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Glass passivated structure for high power thyristors 大功率晶闸管的玻璃钝化结构
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651603
C. Liiceanu, A. Nichita, V. Marinescu, D. Liiceanu, F. Ţurţudău
{"title":"Glass passivated structure for high power thyristors","authors":"C. Liiceanu, A. Nichita, V. Marinescu, D. Liiceanu, F. Ţurţudău","doi":"10.1109/SMICND.1997.651603","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651603","url":null,"abstract":"A low cost and reliable glass passivated structure for 35 Arms thyristors has been manufactured using sealed tube diffusions, mesa etching from both sides of the wafer and a lift-off metallisation technique. Best trade-off I/sub G_T_/d/spl nu//dt performance has been designed using two dimensional simulation of triggering mechanisms, followed by experimental validation of calculated values.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115168388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Real time microprocessor control loop for switched mode power supply 实时微处理器控制回路开关模式电源
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651336
M. Sorescu
{"title":"Real time microprocessor control loop for switched mode power supply","authors":"M. Sorescu","doi":"10.1109/SMICND.1997.651336","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651336","url":null,"abstract":"This paper describes a control loop circuit for the switched mode power supply (SMPS) to realize very good transient response. This circuit is designed and experimented.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124290770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A quantitative analysis of the penetration of SnO/sub 2/ into porous silicon SnO/ sub2 /渗透多孔硅的定量分析
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651552
M. Gartner, C. Savaniu, C. Parlog, M. Zaharescu, G. Crăciun, O. Buiu, E. Szilagy, C. Cobianu
{"title":"A quantitative analysis of the penetration of SnO/sub 2/ into porous silicon","authors":"M. Gartner, C. Savaniu, C. Parlog, M. Zaharescu, G. Crăciun, O. Buiu, E. Szilagy, C. Cobianu","doi":"10.1109/SMICND.1997.651552","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651552","url":null,"abstract":"The oxidation of monocrystalline silicon wafer (even at low temperatures /spl sim/500/spl deg/C) through the pores of SnO/sub 2/ sol-gel films deposited on it and the penetration of the Sn into the depth of porous silicon (PS) are quantitatively analyzed by Spectroscopic Ellipsometry (SE), Rutherford Back Scattering (RBS) and Infrared Spectroscopy (IR).","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126031917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
On the improvement of the recovery characteristics of semiconductor diodes by electron irradiation 电子辐照改善半导体二极管回收特性的研究
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651029
E. Iliescu, A. Niculescu, V. Banu, A. Nichita, N. Sturzu
{"title":"On the improvement of the recovery characteristics of semiconductor diodes by electron irradiation","authors":"E. Iliescu, A. Niculescu, V. Banu, A. Nichita, N. Sturzu","doi":"10.1109/SMICND.1997.651029","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651029","url":null,"abstract":"The paper relates to the manufacture of fast semiconductor devices and, more particularly, to irradiation of semiconductor diodes to improve their electrical characteristics thereof The electron linear accelerator AL1N-10 was used to irradiate at room and high temperature silicon diodes type BA and BAX. The influence of 10 MeV electron irradiation upon the main electrical characteristics (reverse recovery time, forward voltage) has been examined for different dosages of 10 to 50 kGy.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122366713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The temperature dependence of time-averaged hole drift mobility in As/sub 2/S/sub 3/ derived from PA measurements 由PA测量得到As/sub 2/S/sub 3/中时间平均空穴漂移迁移率的温度依赖关系
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651545
A.M. Andriesh, I. Culeac, P. Ewen, A. Owen
{"title":"The temperature dependence of time-averaged hole drift mobility in As/sub 2/S/sub 3/ derived from PA measurements","authors":"A.M. Andriesh, I. Culeac, P. Ewen, A. Owen","doi":"10.1109/SMICND.1997.651545","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651545","url":null,"abstract":"The time-averaged hole drift mobility in As/sub 2/S/sub 3/ glass was studied in the range 77-330 K on the basis of temperature dependence of steady-state photoinduced absorption. The hole mobility was found to be thermally activated at high temperatures, of the order of 10/sup -10/ cm/sup 2//V sec at 300 K and almost temperature independent below /spl sim/130 K.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124669439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Phase diagram for pseudomorphic Si/sub x/Ge/sub 1-x/ crystals 伪晶Si/sub -x/ Ge/sub - 1-x晶体的相图
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651245
I.S. Chikichev, A. V. Vasev, S.I. Chikichev
{"title":"Phase diagram for pseudomorphic Si/sub x/Ge/sub 1-x/ crystals","authors":"I.S. Chikichev, A. V. Vasev, S.I. Chikichev","doi":"10.1109/SMICND.1997.651245","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651245","url":null,"abstract":"The solid-liquid phase diagram is calculated for semiconductor binary solid solutions Si/sub x/Ge/sub 1-x/ coherently coupled with the lattice-mismatched substrates of various orientations. It is shown that elastic strain in pseudomorphic alloys results in dramatic reconfiguration of the familiar lens-type bulk phase diagram significantly shifting the melting points of pure Si or Ge crystals due to additional stress-induced energy.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130506915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tapered windows in silicon dioxide layers for masking and passivation: obtaining and characterization methods 用于掩蔽和钝化的二氧化硅层中的锥形窗口:获取和表征方法
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651589
M. Negreanu, R. Gavrila, A. Dinescu
{"title":"Tapered windows in silicon dioxide layers for masking and passivation: obtaining and characterization methods","authors":"M. Negreanu, R. Gavrila, A. Dinescu","doi":"10.1109/SMICND.1997.651589","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651589","url":null,"abstract":"Tapered windows in silicon dioxide layers were obtained by three different procedures, all involving the formation of a faster etching thin oxide layer on the top of the main masking layer. Slope angles for each case were estimated by several methods and the results compared and commented on.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129037495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Double donor impurity in a quantum structure 量子结构中的双施主杂质
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651579
E. Niculescu, G. Cone, A. Niculescu
{"title":"Double donor impurity in a quantum structure","authors":"E. Niculescu, G. Cone, A. Niculescu","doi":"10.1109/SMICND.1997.651579","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651579","url":null,"abstract":"The binding energy of a double donor at the center of a GaAs/AlGaAs quantum structure is calculated by a variational method. We have considered the two cases of positive donor center and neutral donor center. It is found that for the studied structures-square wells, parabolic wells, and quantum dots-the double donors have deep energy levels, strongly sensitive to the variation of the range of confinement.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"49 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123689031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Process using TiSi/sub 2/ as a shallow contact metallization 采用TiSi/ sub2 /作为浅接触金属化的工艺
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651592
E. Manea, R. Divan, M. Stoica, S. Dunare
{"title":"Process using TiSi/sub 2/ as a shallow contact metallization","authors":"E. Manea, R. Divan, M. Stoica, S. Dunare","doi":"10.1109/SMICND.1997.651592","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651592","url":null,"abstract":"Because of its low resistivity and excellent thermal stability, TiSi/sub 2/ is finding widespread application as interconnect material in BiCMOS and power devices. The Ti-Si reaction is complex and has been studied in certain regimes. For diminishing the stress a new method for deposition is tried. The thermal conditions were established and the morphology of TiSi/sub 2/ is explored with a X-ray powder diffractometer. TiSi/sub 2/ is formed on Si(100) and Si(111) substrates. The electric performances were determinate by a Van der Pauw structure.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121665947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nonlinear transmission lines on GaAs membranes for picosecond and large amplitude shockwaves generation 用于皮秒和大振幅激波产生的GaAs膜非线性传输线
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651181
S. Simion, G. Bartolucci, R. Marcelli, A. Muller, B. Szentpáli, F. Riesz
{"title":"Nonlinear transmission lines on GaAs membranes for picosecond and large amplitude shockwaves generation","authors":"S. Simion, G. Bartolucci, R. Marcelli, A. Muller, B. Szentpáli, F. Riesz","doi":"10.1109/SMICND.1997.651181","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651181","url":null,"abstract":"In this paper, the nonlinear transmission lines (NLTLs) for picosecond shockwaves generation, manufactured on GaAs membrane are analysed for the first time. A comparison between the performances obtained by using NETLs on GaAs bulk as well as on GaAs membrane is performed by computer simulation. It is shown that the NLTL realised on GaAs membrane is able to generate shockwaves having shorter fall-time and larger amplitude compare to the NLTL realised on GaAs bulk, for the same number of Schottky diodes and Bragg frequency.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"02 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124509320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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