{"title":"由PA测量得到As/sub 2/S/sub 3/中时间平均空穴漂移迁移率的温度依赖关系","authors":"A.M. Andriesh, I. Culeac, P. Ewen, A. Owen","doi":"10.1109/SMICND.1997.651545","DOIUrl":null,"url":null,"abstract":"The time-averaged hole drift mobility in As/sub 2/S/sub 3/ glass was studied in the range 77-330 K on the basis of temperature dependence of steady-state photoinduced absorption. The hole mobility was found to be thermally activated at high temperatures, of the order of 10/sup -10/ cm/sup 2//V sec at 300 K and almost temperature independent below /spl sim/130 K.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"102 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The temperature dependence of time-averaged hole drift mobility in As/sub 2/S/sub 3/ derived from PA measurements\",\"authors\":\"A.M. Andriesh, I. Culeac, P. Ewen, A. Owen\",\"doi\":\"10.1109/SMICND.1997.651545\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The time-averaged hole drift mobility in As/sub 2/S/sub 3/ glass was studied in the range 77-330 K on the basis of temperature dependence of steady-state photoinduced absorption. The hole mobility was found to be thermally activated at high temperatures, of the order of 10/sup -10/ cm/sup 2//V sec at 300 K and almost temperature independent below /spl sim/130 K.\",\"PeriodicalId\":144314,\"journal\":{\"name\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"volume\":\"102 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1997.651545\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1997.651545","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The temperature dependence of time-averaged hole drift mobility in As/sub 2/S/sub 3/ derived from PA measurements
The time-averaged hole drift mobility in As/sub 2/S/sub 3/ glass was studied in the range 77-330 K on the basis of temperature dependence of steady-state photoinduced absorption. The hole mobility was found to be thermally activated at high temperatures, of the order of 10/sup -10/ cm/sup 2//V sec at 300 K and almost temperature independent below /spl sim/130 K.
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