On the improvement of the recovery characteristics of semiconductor diodes by electron irradiation

E. Iliescu, A. Niculescu, V. Banu, A. Nichita, N. Sturzu
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Abstract

The paper relates to the manufacture of fast semiconductor devices and, more particularly, to irradiation of semiconductor diodes to improve their electrical characteristics thereof The electron linear accelerator AL1N-10 was used to irradiate at room and high temperature silicon diodes type BA and BAX. The influence of 10 MeV electron irradiation upon the main electrical characteristics (reverse recovery time, forward voltage) has been examined for different dosages of 10 to 50 kGy.
电子辐照改善半导体二极管回收特性的研究
本文讨论了快速半导体器件的制造,特别是辐照半导体二极管以改善其电学特性的问题。采用电子直线加速器AL1N-10对BA型和BAX型硅二极管进行室温和高温辐照。研究了10至50 kGy不同剂量的10 MeV电子辐照对主要电特性(反向恢复时间、正向电压)的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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