{"title":"采用TiSi/ sub2 /作为浅接触金属化的工艺","authors":"E. Manea, R. Divan, M. Stoica, S. Dunare","doi":"10.1109/SMICND.1997.651592","DOIUrl":null,"url":null,"abstract":"Because of its low resistivity and excellent thermal stability, TiSi/sub 2/ is finding widespread application as interconnect material in BiCMOS and power devices. The Ti-Si reaction is complex and has been studied in certain regimes. For diminishing the stress a new method for deposition is tried. The thermal conditions were established and the morphology of TiSi/sub 2/ is explored with a X-ray powder diffractometer. TiSi/sub 2/ is formed on Si(100) and Si(111) substrates. The electric performances were determinate by a Van der Pauw structure.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"119 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Process using TiSi/sub 2/ as a shallow contact metallization\",\"authors\":\"E. Manea, R. Divan, M. Stoica, S. Dunare\",\"doi\":\"10.1109/SMICND.1997.651592\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Because of its low resistivity and excellent thermal stability, TiSi/sub 2/ is finding widespread application as interconnect material in BiCMOS and power devices. The Ti-Si reaction is complex and has been studied in certain regimes. For diminishing the stress a new method for deposition is tried. The thermal conditions were established and the morphology of TiSi/sub 2/ is explored with a X-ray powder diffractometer. TiSi/sub 2/ is formed on Si(100) and Si(111) substrates. The electric performances were determinate by a Van der Pauw structure.\",\"PeriodicalId\":144314,\"journal\":{\"name\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"volume\":\"119 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1997.651592\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1997.651592","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Process using TiSi/sub 2/ as a shallow contact metallization
Because of its low resistivity and excellent thermal stability, TiSi/sub 2/ is finding widespread application as interconnect material in BiCMOS and power devices. The Ti-Si reaction is complex and has been studied in certain regimes. For diminishing the stress a new method for deposition is tried. The thermal conditions were established and the morphology of TiSi/sub 2/ is explored with a X-ray powder diffractometer. TiSi/sub 2/ is formed on Si(100) and Si(111) substrates. The electric performances were determinate by a Van der Pauw structure.