SnO/ sub2 /渗透多孔硅的定量分析

1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI:10.1109/SMICND.1997.651552

M. Gartner, C. Savaniu, C. Parlog, M. Zaharescu, G. Crăciun, O. Buiu, E. Szilagy, C. Cobianu

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引用次数: 1

摘要

利用椭圆偏振光谱(SE)、卢瑟福反向散射(RBS)和红外光谱(IR)定量分析了单晶硅片(即使在低温/500℃/500℃/spl℃)通过SnO/sub - 2/溶胶-凝胶膜的孔隙的氧化和Sn对多孔硅(PS)深度的渗透。

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A quantitative analysis of the penetration of SnO/sub 2/ into porous silicon

The oxidation of monocrystalline silicon wafer (even at low temperatures /spl sim/500/spl deg/C) through the pores of SnO/sub 2/ sol-gel films deposited on it and the penetration of the Sn into the depth of porous silicon (PS) are quantitatively analyzed by Spectroscopic Ellipsometry (SE), Rutherford Back Scattering (RBS) and Infrared Spectroscopy (IR).

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1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings

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