E. Iliescu, A. Niculescu, V. Banu, A. Nichita, N. Sturzu
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On the improvement of the recovery characteristics of semiconductor diodes by electron irradiation
The paper relates to the manufacture of fast semiconductor devices and, more particularly, to irradiation of semiconductor diodes to improve their electrical characteristics thereof The electron linear accelerator AL1N-10 was used to irradiate at room and high temperature silicon diodes type BA and BAX. The influence of 10 MeV electron irradiation upon the main electrical characteristics (reverse recovery time, forward voltage) has been examined for different dosages of 10 to 50 kGy.
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