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1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings最新文献

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Effects of lens aberrations on critical dimension control in optical lithography 光学光刻中透镜像差对关键尺寸控制的影响
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651239
M. Dusa
{"title":"Effects of lens aberrations on critical dimension control in optical lithography","authors":"M. Dusa","doi":"10.1109/SMICND.1997.651239","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651239","url":null,"abstract":"For sub half-micron lithography, control of the Critical Dimension, represents the key to a robust and manufacturable process. The lithographer must understand and tune the exposure system for critical dimension performance using variables such as Numerical Aperture (NA), Partial Coherence (PC), position of the Focal Plane. Exposure tool must be characterized for its lens signature and the tools must be matched for their CD variation within the optical field In a previous study, we demonstrated that the phase-shift focal plane monitor, PSFM accurately measures focal plane variations when appropriate calibrations are employed. That paper also described the development of a model to determine lens classic aberrations such as Coma, Astigmatism and Field Curvature. The publication correlated the results to an approximation of the stepper's Critical Dimension (CD) behavior for a matrix of NA and PC settings. The present study, continues to study CD uniformity through examination of the lens aberrations and field focal signature of optical steppers in a 0.35 um process. We describe a method of measuring the uniformity of numerical aperture (NA) and partial coherence (PC) across the exposure field this new tool is then applied as an aid in optical lens characterization and tool-to-tool matching. The information gathered is thereupon applied to measure lens aberrations and predict CD variation across the field under various settings of the lens focal plane, the predictions are validated by a comparison against CD uniformity as measured by an advanced critical dimension metrology system.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121621715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Vowel recognition in Romanian language 罗马尼亚语的元音识别
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651330
O. Grigore, I. Gavat, M. Zirra
{"title":"Vowel recognition in Romanian language","authors":"O. Grigore, I. Gavat, M. Zirra","doi":"10.1109/SMICND.1997.651330","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651330","url":null,"abstract":"In this paper are presented results obtained in a vowel recognition task applying unsupervised and supervised fuzzy algorithms and neural networks. The vowels, uttered from 10 speakers each in 250 different contexts are recognized using as features the first three formant frequencies. After an introduction, the feature extraction is presented and then the two fuzzy algorithms (fuzzy ISODATA, fuzzy k-NN) and the two neural nets (nonlinear perceptron, Kohonen map) used for recognition are given.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130094890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical properties of a-Si/sub 3/N/sub 4/ and a-SiO/sub x/N/sub y/ a-Si/sub 3/N/sub 4/和a-SiO/sub x/N/sub y/的光学性质
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651270
M. Modreanu, N. Tomozeiu, P. Cosmin, M. Gartner
{"title":"Optical properties of a-Si/sub 3/N/sub 4/ and a-SiO/sub x/N/sub y/","authors":"M. Modreanu, N. Tomozeiu, P. Cosmin, M. Gartner","doi":"10.1109/SMICND.1997.651270","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651270","url":null,"abstract":"Some optical properties of a-SiN/sub x/ and a-SiO/sub x/N/sub y/ films deposited by LPCVD method are studied. Refractive index measured by ellipsometry method and IR absorption are studied as a function of some deposition parameters: temperature of deposition, gases flux ratio. The high value of deposition temperature means low values in refractive index. More oxygen into films decreases the refractive index. The refractive index dispersion is studied by single-oscillator model.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130840702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An investigation on high dose ionic implanted silicon based on EPR and optical spectroscopy 基于EPR和光谱学的高剂量离子注入硅的研究
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651584
M. Bercu, V. Grecu, I. Ghita, C. Bercu, C. Radu, S. Goliat
{"title":"An investigation on high dose ionic implanted silicon based on EPR and optical spectroscopy","authors":"M. Bercu, V. Grecu, I. Ghita, C. Bercu, C. Radu, S. Goliat","doi":"10.1109/SMICND.1997.651584","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651584","url":null,"abstract":"The investigation of phosphorus implanted Si structures at 100 keV for doses in the range of 10/sup 15/ cm/sup -2/ 10/sup 16/ cm/sup -2/ have been studied by EPR and UV-VIS reflectance spectroscopy. Phosphorus related defects are localised in the amorphous silicon environment (g=2.006). The annealing behaviour of both para and diamagnetic defects, has been analysed in the range of 50-550/spl deg/C. The activation energy of the paramagnetic centres in silicon has been determined surprisingly low 0.15 eV, but in accordance with other reported studies. We found that the average lifetime of the paramagnetic centres measured by EPR (4.4 min/400/spl deg/C) is much shorter than the time constant of the diamagnetic defects recovering process (112 min/450/spl deg/C) determined by optical reflectance method. A preliminary interpretation on the experimental data is proposed.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"224 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131325826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electronic properties of the SiC-SiO/sub 2/ interface and related systems SiC-SiO/sub /接口及相关系统的电子特性
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651559
Thierry Ouisse, E. Bano
{"title":"Electronic properties of the SiC-SiO/sub 2/ interface and related systems","authors":"Thierry Ouisse, E. Bano","doi":"10.1109/SMICND.1997.651559","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651559","url":null,"abstract":"The properties of the SiC/SiO/sub 2/ interface defects and electron transport in silicon carbide inversion layers are discussed. Emphasis is put on the thermally-activated conductivity which prevails at room temperature. The transport properties are related to the conclusions that can be drawn from the electrical characterization of the SiC/SiO/sub 2/ interface and the oxide reliability is studied.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"200 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124388219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Correlations of vibrational frequencies with VO/sub 4/ defect in irradiated silicon 辐照硅中振动频率与VO/sub /缺陷的相关性
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651549
N. Sarlis, C. A. Londos, L.G. Fytros
{"title":"Correlations of vibrational frequencies with VO/sub 4/ defect in irradiated silicon","authors":"N. Sarlis, C. A. Londos, L.G. Fytros","doi":"10.1109/SMICND.1997.651549","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651549","url":null,"abstract":"This paper reports infrared spectroscopy studies on oxygen related defects in Czochralsky grown neutron irradiated Silicon material subsequently submitted to heat treatment. The sequential formation of various VO/sub n/ (n=1,2,3,4) defects according to the reaction process VO/spl rarr/VO/sub 2//spl rarr/VO/sub 3//spl rarr/VO/sub 4/ is investigated. We argue that on increasing the annealing temperature different sites for the addition of oxygen atoms become available, triggering for n>2 two parallel formation sequencies in relation with VO/sub 3/ and VO/sub 4/ defects. Thus in the first sequence the oxygen atoms are added in adjacent sites to VO/sub 2/ defect although in the second sequence the oxygen atoms are added in the same vacant site of VO/sub 2/ defect.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114633446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An investigation of the I-V relationship of double barrier resonant tunneling diodes in oscillating conditions 振荡条件下双势垒共振隧道二极管I-V关系的研究
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651174
D. Neculoiu, I. Sztojanov, T. Tebeanu
{"title":"An investigation of the I-V relationship of double barrier resonant tunneling diodes in oscillating conditions","authors":"D. Neculoiu, I. Sztojanov, T. Tebeanu","doi":"10.1109/SMICND.1997.651174","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651174","url":null,"abstract":"The measured I-V characteristics of the double barrier resonant tunneling (DBRT) diode is distorted in the negative differential conductance region if the device is unstable. This paper presents a study of the I-V curve of the DBRT diode in oscillating conditions. This task is fulfilled using an accurate large signal model and PSPICE simulations. First, the PSPICE DBRT diode model is presented. Then the circuit model used for nonlinear simulations is described. Based on the simulation results, concluding remarks with regards to DBRT diode behavior are derived.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115035130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Semiconductor wafer bonding. A flexible approach to materials combinations in microelectronics; micromechanics and optoelectronics 半导体晶圆键合。微电子材料组合的柔性方法微力学和光电子学
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651544
U. Gosele, M. Alexe, P. Kopperschmidt, Q. Tong
{"title":"Semiconductor wafer bonding. A flexible approach to materials combinations in microelectronics; micromechanics and optoelectronics","authors":"U. Gosele, M. Alexe, P. Kopperschmidt, Q. Tong","doi":"10.1109/SMICND.1997.651544","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651544","url":null,"abstract":"The wafer bonding approach, originally developed mostly for the fabrication of silicon-on-insulator (SOI) substrates, has matured to a flexible technology giving access to materials combinations with applications far beyond the original area of SOI substrates. The paper will first review our present understanding of silicon-silicon wafer bonding and then proceed to bonding of dissimilar wafers and various thinning approaches including that associated with hydrogen implantation. Finally, low temperature wafer bonding approaches such as room temperature wafer bonding under ultra high vacuum conditions will be discussed.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117041006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Technology CAD for smart power devices 智能电力设备的技术CAD
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651201
T. Simlinger, C. Pichler, R. Plasun, S. Selberherr
{"title":"Technology CAD for smart power devices","authors":"T. Simlinger, C. Pichler, R. Plasun, S. Selberherr","doi":"10.1109/SMICND.1997.651201","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651201","url":null,"abstract":"Technology CAD has already proven to be an attractive supplement to standard process development methodologies for VLSI technology. The Vienna Integrated System for TCAD Applications is such a simulation environment which offers great flexibility and a large number of tools for process development. On the other hand smart power devices gain increasingly interest for applications which need to combine low voltage logic and power output devices as, e.g. for automotive electronics. The flexibility of TCAD makes it also applicable for smart power technology to cut down development costs and cycle times.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"765 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116411334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Wideband measuring equipment for mobile radio channel 移动无线电信道用宽带测量设备
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651333
V. Buiculescu, I. Marghescu, S. Ciochină
{"title":"Wideband measuring equipment for mobile radio channel","authors":"V. Buiculescu, I. Marghescu, S. Ciochină","doi":"10.1109/SMICND.1997.651333","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651333","url":null,"abstract":"Environment dependent propagation factors like time delay spread and pass loss have a determinant influence upon wireless communication systems engineering. These factors tend to become part of the wireless networks, so accurate determination methods are needed. A versatile sounding equipment based on convolution matched-filter method is presented allowing delay and loss parameters measurement in the 1.64 GHz band.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121894692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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