Optical properties of a-Si/sub 3/N/sub 4/ and a-SiO/sub x/N/sub y/

M. Modreanu, N. Tomozeiu, P. Cosmin, M. Gartner
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Abstract

Some optical properties of a-SiN/sub x/ and a-SiO/sub x/N/sub y/ films deposited by LPCVD method are studied. Refractive index measured by ellipsometry method and IR absorption are studied as a function of some deposition parameters: temperature of deposition, gases flux ratio. The high value of deposition temperature means low values in refractive index. More oxygen into films decreases the refractive index. The refractive index dispersion is studied by single-oscillator model.
a-Si/sub 3/N/sub 4/和a-SiO/sub x/N/sub y/的光学性质
研究了用LPCVD法制备的a-SiN/sub x/和a-SiO/sub x/N/sub y/薄膜的光学性质。研究了椭偏法测量的折射率和红外吸收随沉积温度、气体通量比等沉积参数的变化规律。沉积温度越高,折射率越低。进入薄膜的氧气越多,折射率就越低。用单振子模型研究了折射率色散。
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