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1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings最新文献

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Surface segregation in pseudomorphic Si/sub x/Ge/sub 1-x/ crystals 伪晶Si/sub -x/ Ge/sub - 1-x/晶体的表面偏析
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651247
A. V. Vasev, I. Chikichev, S. I. Chikichev
{"title":"Surface segregation in pseudomorphic Si/sub x/Ge/sub 1-x/ crystals","authors":"A. V. Vasev, I. Chikichev, S. I. Chikichev","doi":"10.1109/SMICND.1997.651247","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651247","url":null,"abstract":"Composition of the first atomic layer at the crystal-vacuum interface is calculated for coherent SiGe epilayers grown on Si and Ge substrates with (100) and orientations. Comparison with similar data for bulk unstrained alloy crystals reveals significant differences in segregation behaviour between pseudomorphic and bulk crystals.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124771400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modelling and optimisation for an electrostatic actuation of a valveless micropump using a silicon buckled membrane 建模和优化的静电驱动的无阀微型泵使用硅扣膜
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651570
D. Popescu, P. Lerch, C. Dunare, D. Dascalu
{"title":"Modelling and optimisation for an electrostatic actuation of a valveless micropump using a silicon buckled membrane","authors":"D. Popescu, P. Lerch, C. Dunare, D. Dascalu","doi":"10.1109/SMICND.1997.651570","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651570","url":null,"abstract":"An electrostatic actuator for micropumps driving has been designed. Modelling and optimisation of the actuator have been made for obtaining small driving voltages for harmonic oscillations in the kHz frequency range with submicrometer amplitudes and for developing improved external forces.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129546071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Identification of temperature profile and heat transfer on a dielectric membrane for gas sensors by "COSMOS" program simulation 用COSMOS程序模拟气体传感器介质膜的温度分布和传热特性
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651567
M. Dumitrescu, C. Cobianu, D. Lungu, D. Dascalu, A. Pascu, A. van den Berg, J. Gardeniers, S. Kolev, C. Ducso, I. Bársony
{"title":"Identification of temperature profile and heat transfer on a dielectric membrane for gas sensors by \"COSMOS\" program simulation","authors":"M. Dumitrescu, C. Cobianu, D. Lungu, D. Dascalu, A. Pascu, A. van den Berg, J. Gardeniers, S. Kolev, C. Ducso, I. Bársony","doi":"10.1109/SMICND.1997.651567","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651567","url":null,"abstract":"The application of commercial 3-D software \"COSMOS\" for the design and thermal analysis of the low power consumption test structures with dielectric membrane for gas microsensors is presented. Within this work, the simulation provides the estimation of the temperature profile on the active area and the whole membrane including the four bridges and the heating efficiency in the temperature range 20-500/spl deg/C. Unravelling of the heat loss mechanisms in terms of radiation, convection, conduction by air and solid materials during heat transfer on the dielectric membrane is reported for the first time as a mean to evaluate by 3-D simulation the contribution of technological processes and lay-out design to the total heat losses.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129802301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
The multichannel microprobe for recording/stimulation of neural/muscular activity, CMOS technology compatible 用于记录/刺激神经/肌肉活动的多通道微探针，兼容CMOS技术
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651306
C. Moldovan, R. Iosub, G. Nechifor, C. Radu, D. Bogdan, C. Flueraru, I. Cernic, R. Vasilco, I. Dinoiu
{"title":"The multichannel microprobe for recording/stimulation of neural/muscular activity, CMOS technology compatible","authors":"C. Moldovan, R. Iosub, G. Nechifor, C. Radu, D. Bogdan, C. Flueraru, I. Cernic, R. Vasilco, I. Dinoiu","doi":"10.1109/SMICND.1997.651306","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651306","url":null,"abstract":"This paper presents the description, the technological steps, the specific process of fabrication of a multichannel microprobe for recording/stimulation the neural/muscular activity. Few problems of anisotropic etching are analyzed. The compatibility between the materials used in the semiconductor fabrication and the human body is analyzed. The final goal is the treatment of chronic pain in a closed loop scheme of electric recording and stimulation in the brain.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131157794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Colour cathodoluminescence and photoluminescence of II-VI compounds subjected to thermal treatments II-VI化合物经热处理后的彩色阴极发光和光致发光
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651249
M. V. Nazarov, T. A. Nazarova, L. Bruk, V. Korotkov, A.V. Simashkevich, R. Sobolevskaya, K. Sushkevich
{"title":"Colour cathodoluminescence and photoluminescence of II-VI compounds subjected to thermal treatments","authors":"M. V. Nazarov, T. A. Nazarova, L. Bruk, V. Korotkov, A.V. Simashkevich, R. Sobolevskaya, K. Sushkevich","doi":"10.1109/SMICND.1997.651249","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651249","url":null,"abstract":"Colour cathodoluminescence (CCL) offers a highly sensitive technique for qualitative and quantitative luminescence analysis of semiconductive materials and devices with high spatial resolution. ZnS, ZnSe and MgO crystals subjected to various thermal treatments have been investigated and wealth of previously unobservable information have been obtained.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115157900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Three terminal double barrier resonant tunneling devices with the base contact to the quantum well 基极与量子阱接触的三端双势垒共振隧道装置
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651566
M. Lepsa, T. van de Roer, J. Kwaspen, E. Smalbrugge, W. van der Vleuten, L. Kaufmann
{"title":"Three terminal double barrier resonant tunneling devices with the base contact to the quantum well","authors":"M. Lepsa, T. van de Roer, J. Kwaspen, E. Smalbrugge, W. van der Vleuten, L. Kaufmann","doi":"10.1109/SMICND.1997.651566","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651566","url":null,"abstract":"Three terminal (3T) Double Barrier Resonant Tunneling (DBRT) devices having the base contact to the quantum well have been fabricated from GaAs/AlAs material system. The technological solution is based on high selective etching processes to reach the plane of the very thin quantum well on which, subsequently, a Schottky base contact is obtained using a nonalloyed Ti/Pt/Au metallization scheme. DC and AC electrical measurements demonstrate that the base contact lies on the quantum well of the DBRT structure and the base voltage modulates the collector current. It is shown that the electrical characteristics of these devices enlarge the possibilities of investigations on DBRT structures and suggest important applications in high-speed electronics.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"216 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131997038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High sensitivity and low dark current PIN photodiode with homojunction in n-InGaAaS/InP isotype heterostructure n-InGaAaS/InP同型异质结构的高灵敏度低暗电流PIN光电二极管
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651264
E. Budianu, M. Purica, E. Rusu, S. Nan
{"title":"High sensitivity and low dark current PIN photodiode with homojunction in n-InGaAaS/InP isotype heterostructure","authors":"E. Budianu, M. Purica, E. Rusu, S. Nan","doi":"10.1109/SMICND.1997.651264","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651264","url":null,"abstract":"The preparation and properties of Zn-diffusion homojunction InP/In/sub 0.53/Ga/sub 0.47/As photodiodes capable to operate in the 0.8-1.7 /spl mu/m wavelength range are described. These PIN photodiodes exhibit a sensitivity of 0.3 A/W at 0.8 /spl mu/m wavelength and 0.82 A/W at 1.3 /spl mu/m, a generation-recombination limited dark current of 10/sup -7/ A/mm/sup 2/ and 140 ps risetime.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114097777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Post-transit photocurrent analysis of the distribution of localized states in a-Si:H and its alloys a-Si:H及其合金中局域态分布的透射后光电流分析
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651220
G. Adriaenssens
{"title":"Post-transit photocurrent analysis of the distribution of localized states in a-Si:H and its alloys","authors":"G. Adriaenssens","doi":"10.1109/SMICND.1997.651220","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651220","url":null,"abstract":"The sandwich-cell sample geometry that is used for measuring the transient photocurrents in traditional time-of-flight (TOF) experiments in amorphous semiconductors, can also be used well beyond the TOF transit-time to measure the emission of charge carriers from deep traps. A density-of-states profile can then be calculated from the emission current, provided deep retrapping or random energy fluctuations do not dominate the response. Hydrogenated amorphous silicon and its alloys provide a full range of examples for the possibilities and problems of the technique.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"268 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121898104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
LIGA and alternative techniques for microoptical components LIGA和微光学元件的替代技术
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651568
N. Moldovan, M. Ilie, N. Dumbravescu, M. Danila, A. Vitriuc, P. Sindile, J. Mohr
{"title":"LIGA and alternative techniques for microoptical components","authors":"N. Moldovan, M. Ilie, N. Dumbravescu, M. Danila, A. Vitriuc, P. Sindile, J. Mohr","doi":"10.1109/SMICND.1997.651568","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651568","url":null,"abstract":"Microoptical components can be replicated in various thermoplastic materials, using micromolds fabricated through LIGA or alternative techniques like anisotropic etching of silicon or mechanical micromachining. The replication technique itself can be fulfilled on dedicated machines or on in-house fabricated tools. We report as demonstrators high aperture microlenses, diffraction gratings and microprisms, single or in arrays. The replication technique is well-suited for high-performance microfabrication in small size enterprises.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122799424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
LSOBS chip set for ATM with concentration function 具有集中功能的ATM专用LSOBS芯片组
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651558
J. Lee, J. Kim, J. Nah, K. Park
{"title":"LSOBS chip set for ATM with concentration function","authors":"J. Lee, J. Kim, J. Nah, K. Park","doi":"10.1109/SMICND.1997.651558","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651558","url":null,"abstract":"This paper presents the LSOBS chip set that has function of concentration. The LSOBS mainly consists of two types of ASICs which are switch chip NSBM and SMC respectively. Each chip is implemented by 0.5 /spl mu/m CMOS triple-metal technology. The total transistor count of each chip is about 940 K and the chip die size is 17 mm/spl times/7 mm. And it is packaged with 447-pin CPGA, and the operation speed is 46.74 MHz.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126131557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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