{"title":"a-Si:H及其合金中局域态分布的透射后光电流分析","authors":"G. Adriaenssens","doi":"10.1109/SMICND.1997.651220","DOIUrl":null,"url":null,"abstract":"The sandwich-cell sample geometry that is used for measuring the transient photocurrents in traditional time-of-flight (TOF) experiments in amorphous semiconductors, can also be used well beyond the TOF transit-time to measure the emission of charge carriers from deep traps. A density-of-states profile can then be calculated from the emission current, provided deep retrapping or random energy fluctuations do not dominate the response. Hydrogenated amorphous silicon and its alloys provide a full range of examples for the possibilities and problems of the technique.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"268 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Post-transit photocurrent analysis of the distribution of localized states in a-Si:H and its alloys\",\"authors\":\"G. Adriaenssens\",\"doi\":\"10.1109/SMICND.1997.651220\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The sandwich-cell sample geometry that is used for measuring the transient photocurrents in traditional time-of-flight (TOF) experiments in amorphous semiconductors, can also be used well beyond the TOF transit-time to measure the emission of charge carriers from deep traps. A density-of-states profile can then be calculated from the emission current, provided deep retrapping or random energy fluctuations do not dominate the response. Hydrogenated amorphous silicon and its alloys provide a full range of examples for the possibilities and problems of the technique.\",\"PeriodicalId\":144314,\"journal\":{\"name\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"volume\":\"268 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1997.651220\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1997.651220","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Post-transit photocurrent analysis of the distribution of localized states in a-Si:H and its alloys
The sandwich-cell sample geometry that is used for measuring the transient photocurrents in traditional time-of-flight (TOF) experiments in amorphous semiconductors, can also be used well beyond the TOF transit-time to measure the emission of charge carriers from deep traps. A density-of-states profile can then be calculated from the emission current, provided deep retrapping or random energy fluctuations do not dominate the response. Hydrogenated amorphous silicon and its alloys provide a full range of examples for the possibilities and problems of the technique.
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