n-InGaAaS/InP同型异质结构的高灵敏度低暗电流PIN光电二极管

1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI:10.1109/SMICND.1997.651264

E. Budianu, M. Purica, E. Rusu, S. Nan

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引用次数: 0

摘要

介绍了在0.8 ~ 1.7 /spl μ m波长范围内工作的zno扩散同结InP/In/sub 0.53/Ga/sub 0.47/As光电二极管的制备及其性能。这些PIN光电二极管在0.8 /spl mu/m波长下的灵敏度为0.3 a /W，在1.3 /spl mu/m波长下的灵敏度为0.82 a /W，生成重组限制暗电流为10/sup -7/ a /mm/sup 2/，上升时间为140 ps。

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High sensitivity and low dark current PIN photodiode with homojunction in n-InGaAaS/InP isotype heterostructure

The preparation and properties of Zn-diffusion homojunction InP/In/sub 0.53/Ga/sub 0.47/As photodiodes capable to operate in the 0.8-1.7 /spl mu/m wavelength range are described. These PIN photodiodes exhibit a sensitivity of 0.3 A/W at 0.8 /spl mu/m wavelength and 0.82 A/W at 1.3 /spl mu/m, a generation-recombination limited dark current of 10/sup -7/ A/mm/sup 2/ and 140 ps risetime.

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1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings

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