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1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings最新文献

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Fractal study for describing surface morphology from atomic forge microscopy images 描述原子锻造显微图像表面形貌的分形研究
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651318
C. Flueraru, S. Năstase, Ş. Iovan
{"title":"Fractal study for describing surface morphology from atomic forge microscopy images","authors":"C. Flueraru, S. Năstase, Ş. Iovan","doi":"10.1109/SMICND.1997.651318","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651318","url":null,"abstract":"Roughness profiles of various polysilicon surface were measured by atomic force microscopy. These profiles are analysed using fractal theory to illustrate the advantage of treating surface morphology from the fractal point of view.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129442652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Indirect aluminum incorporation for N/P/N junctions formation in silicon 硅中间接掺入铝形成N/P/N结
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651550
P. Godignon, E. Morvan, J. Montserrat, X. Jordà, M. Vellvehí, D. Flores, J. Rebollo, J. Millán
{"title":"Indirect aluminum incorporation for N/P/N junctions formation in silicon","authors":"P. Godignon, E. Morvan, J. Montserrat, X. Jordà, M. Vellvehí, D. Flores, J. Rebollo, J. Millán","doi":"10.1109/SMICND.1997.651550","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651550","url":null,"abstract":"This paper presents a new method for Aluminum and Arsenic inclusion into silicon based on recoil implantation. Arsenic has been implanted through an Al layer and a silicon oxide layer. Experiments consisting in implantation+annealing have been carried out in order to obtain N/sup +//P/N/sup -//N/sup +/ structures. The feasibility of such structures is demonstrated and the problems linked to the process are identified for a further optimization of the technology.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124798822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Digital transmission equipment-encoder and decoder 4B/3T-designed with PLDs 数字传输设备-编码器和解码器4B/ 3t -用pld设计
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651334
M. Buf, A. Musat
{"title":"Digital transmission equipment-encoder and decoder 4B/3T-designed with PLDs","authors":"M. Buf, A. Musat","doi":"10.1109/SMICND.1997.651334","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651334","url":null,"abstract":"This paper presents briefly the most significant characteristics of the programmable logic devices (PLDs) internal architecture from MACH family as well as the implementation mode and the specific performances of a 4B/3T line encoder and decoder. The encoder and decoder is used by a digital transmission equipment on coaxial cable. The technology permits miniaturisation and easy practical implementation.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125074189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fractal behaviour of in situ heat treated metal-compound semiconductor structures 原位热处理金属化合物半导体结构的分形行为
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651586
L. Dobos, I. Mojzes, M. Schuszter
{"title":"Fractal behaviour of in situ heat treated metal-compound semiconductor structures","authors":"L. Dobos, I. Mojzes, M. Schuszter","doi":"10.1109/SMICND.1997.651586","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651586","url":null,"abstract":"During device preparation, the metal-compound semiconductor junction endures several heat stresses. Due to the heat stress (or intentional heat treatment) material interdiffusion takes place between the layers. The material transport causes inhomogeneities both laterally and perpendicularly to the surface. The aim of this study: (a) to show that the lateral inhomogeneity of heat treated multilayer metal-compound semiconductor surfaces have fractal character at special temperatures, as it was demonstrated previously for single layer metallisations; (b) to propose a method applicable to determine the fractal dimension of the investigated surface.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126931603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A new large-signal model for double barrier resonant tunneling diodes for frequency multiplier applications 用于倍频应用的双势垒共振隧道二极管的一种新的大信号模型
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651177
D. Neculoiu, T. Tebeanu, I. Sztojanov
{"title":"A new large-signal model for double barrier resonant tunneling diodes for frequency multiplier applications","authors":"D. Neculoiu, T. Tebeanu, I. Sztojanov","doi":"10.1109/SMICND.1997.651177","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651177","url":null,"abstract":"The paper presents a new double barrier resonant tunneling diode large-signal model, suitable for the design of microwave frequency multiplier circuits. The model is based on the device I-V characteristic and the model parameters can be easily extracted from measured data. The model is used to design a frequency multiplier circuit and to estimate its conversion efficiency. The results are in good agreement with those, obtained using an optimization program based on harmonic balance technique.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127213164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
The influence of process physics on the MOS device performance the case of the reverse short channel effect 以反向短通道效应为例，研究了工艺物理对MOS器件性能的影响
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651238
D. Tsoukalas, C. Tsamis
{"title":"The influence of process physics on the MOS device performance the case of the reverse short channel effect","authors":"D. Tsoukalas, C. Tsamis","doi":"10.1109/SMICND.1997.651238","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651238","url":null,"abstract":"The goal of the present review is to show how material experiments using simple structures combined with process simulation can give sufficient insight to complex device phenomena that are critical for the deep submicron MOS device performance. Specifically we shall first present experimental and simulation results on the 2-D distribution of silicon interstitial both in Si and Silicon-On-Insulator. The conclusion drawn from these results will then drive our device experiments and simulations. We shall show that as predicted by the above experiments, NMOS SOI devices exhibit a reduction of the Reverse Short Channel effect (RSCE). Coupled process-device simulation reveals the influence of the fundamental point defect properties on MOS device performance.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127881364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hardware version for two-dimensional cellular automata 二维元胞自动机的硬件版本
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651332
M. Dascalu, E. Franti, Z. Hascsi
{"title":"Hardware version for two-dimensional cellular automata","authors":"M. Dascalu, E. Franti, Z. Hascsi","doi":"10.1109/SMICND.1997.651332","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651332","url":null,"abstract":"In this paper we propose a hardware version for two-dimensional cellular automata. Since cellular automata are parallel systems containing a large number of simple processing elements, their hardware version is necessary for their real-time study and applications. A cellular automata chip is described both at the architectural and cell level. The paper outlines the main functions of the cellular automata chip and describes how they operate. We also present some quantitative aspects that determine the chip dimension. The chip can be succesfully used for experiments with large CA implying long-time evolution.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116686333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Spin-on dopants as lifetime modifier sources in fast recovery epitaxial diodes processing 自旋掺杂剂在快速恢复外延二极管加工中的寿命修饰源
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651585
A. Véron, M. Ohanisian, D. Ciocea, C. Mitroi
{"title":"Spin-on dopants as lifetime modifier sources in fast recovery epitaxial diodes processing","authors":"A. Véron, M. Ohanisian, D. Ciocea, C. Mitroi","doi":"10.1109/SMICND.1997.651585","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651585","url":null,"abstract":"The paper presents the results of an experimental study dedicated to lifetime control in fast recovery epitaxial diodes (FRED) by gold and platinum diffusion from spin-on sources. The main diode parameters, namely reverse recovery time, forward voltage drop and leakage current (especially at high temperatures) are comparatively analyzed. It is shown that platinum and gold offer a different trade-off between these parameters. The final choice of the lifetime modifier is determined by the intended diodes applications.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128954723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Microwave analysis of double barrier resonant tunneling diodes 双势垒共振隧道二极管的微波分析
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651172
M. Lepsa, J. Kwaspen, T. van de Roer, W. van der Vleuten, L. Kaufmann
{"title":"Microwave analysis of double barrier resonant tunneling diodes","authors":"M. Lepsa, J. Kwaspen, T. van de Roer, W. van der Vleuten, L. Kaufmann","doi":"10.1109/SMICND.1997.651172","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651172","url":null,"abstract":"Accurate microwave measurements up to 40 GHz have been carried out on GaAs/AlAs Double Barrier Resonant Tunneling (DBRT) diodes over the whole bias range of its DC characteristic. The resulting small-signal scattering parameters (S-parameters) have been analysed afterwards in terms of equivalent circuits. The analysis demonstrates that the most suitable equivalent circuit of the DBRT structure has to include, apart from the circuit elements used to model the Esaki tunnel diode, an intrinsic inductance which is related to the life time of the quantum well quasi-state involved in the tunneling process. The bias dependency of the equivalent circuit parameters and the maximum oscillation frequency of the DBRT device have been obtained.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114565664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Shared tag for MMU and cache memory MMU和缓存的共享标签
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Pub Date : 1997-10-07 DOI: 10.1109/SMICND.1997.651553
Yonghwan Lee, W. Jeong, Sangjun Ahn, Yongsurk Lee
{"title":"Shared tag for MMU and cache memory","authors":"Yonghwan Lee, W. Jeong, Sangjun Ahn, Yongsurk Lee","doi":"10.1109/SMICND.1997.651553","DOIUrl":"https://doi.org/10.1109/SMICND.1997.651553","url":null,"abstract":"In this paper, we propose a shared tag memory through which both TLB and cache memory can be accessed. The shared tag architecture reduces the area of conventional cache tag memory and also improves the speed of cache system. To validate the proposed architecture, we conducted trace-driven simulations and measured the area and speed based on VLSI circuits.","PeriodicalId":144314,"journal":{"name":"1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings","volume":"21 10","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121010710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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